2EDN8534FXTMA1 vs 2EDN7524GXTMA1 Perbandingan
Perbandingan bersamaan detil 2EDN8534FXTMA1 dari Infineon dan 2EDN7524GXTMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
2EDN7524GXTMA1 - 5A Dual Low-Side Gate Driver for MOSFET/GaN | Infineon
2EDN7524GXTMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | 2EDN8534FXTMA1 | 2EDN7524GXTMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | Power MOSFET Drivers | Power MOSFET Drivers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Driver Type | Dual Low-Side Gate Driver | — |
| Number of Channels | 2 | 2 (dual) |
| Konfigurasi Output | Non-Inverting | — |
| Peak Source/Sink Current | 5 A / 5 A | — |
| Supply Voltage (VCC) | 4.5 V to 20 V | 4.5 V to 20 V [DATA_NEEDED: exact range] |
| Propagation Delay (Typ) | 19 ns | — |
| Channel-to-Channel Delay Match | 1 ns (typ) | — |
| Input Compatibility | LV-TTL | — |
| Input Voltage Tolerance | -12 V to +22 V (absolute max) | -10 V to +20 V on logic pins |
| Active Miller Clamp | Yes (internal) | — |
| Under-Voltage Lockout (UVLO) | Yes | — |
| Rentang Suhu Kerja | -40 C to +125 C | — |
| Paket | PG-DSO-8 (DSO-8) | PG-WSON-8-1 (3 mm x 3 mm) with exposed thermal pad |
| Tipe Mounting | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Level MSL | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL level] |
| Family | EiceDRIVER 2EDN | — |
| Product Type | — | Low-side gate driver IC |
| Drive Current (Source/Sink) | — | 5 A peak |
| Input Logic | — | Non-inverting, TTL / 3.3 V CMOS-compatible |
| Propagation Delay | — | 20 ns typical [DATA_NEEDED: exact figure] |
| Channel-to-Channel Delay Matching | — | 1 ns |
| Waktu naik | — | 5 ns typical [DATA_NEEDED: exact test condition] |
| Waktu Menurun | — | 5 ns typical [DATA_NEEDED: exact test condition] |
| Output Stage | — | Rail-to-rail, separate source/sink |
| UVLO Protection | — | Yes |
| Suhu Kerja | — | -40 C to +125 C |
| Target Devices | — | Standard MOSFETs, superjunction MOSFETs, GaN HEMTs |