2EDR8258XXUMA1 vs 2ED2410EMXUMA1 Comparison

Detailed side-by-side comparison of 2EDR8258XXUMA1 by Infineon and 2ED2410EMXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 2EDR8258XXUMA1 2ED2410EMXUMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Product Type Isolated single-channel gate driver —
Isolation Technology Magnetic (coreless transformer) coupling —
Number of Channels 1 —
Number of Outputs 2 (high-side and low-side, half-bridge) 2 (independent)
Peak Source Current 5 A —
Peak Sink Current 9 A —
Galvanic Isolation (rms) 5700 Vrms —
Galvanic Isolation (peak) 8000 Vpk —
Common-Mode Transient Immunity (CMTI) 150 V/ns —
Propagation Delay (typical) 38 ns —
Driver Supply Voltage (VCC, VBS) 8 V to 20 V —
Input Supply Voltage (VDD) 3 V to 5.5 V —
Operating Temperature Range -40 °C to +125 °C -40 °C to +150 °C
Package PG-DSO-14 (14-pin) PG-TSDSO-24 (exposed pad)
Protection Features UVLO (VCC/VBS), DESAT short-circuit, enable/shutdown, dead-time control, interleaving protection Enable/Shutdown, Overcurrent Protection (OCP), Interleaved Conduction Protection, Charge Pump
Logic Input Non-inverting, CMOS compatible —
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
Driver Type — High-Side N-Channel MOSFET Gate Driver
Configuration — Non-Inverting
Supply Voltage Range (VS) — 8 V to 36 V
Logic/VBAT Voltage Range — 3 V to 58 V
Source Current (typ.) — 175 mA
Sink Current (typ.) — 350 mA
Rise Time — 2 µs
Fall Time — 7 µs
Logic Input Compatibility — 3.3 V and 5 V MCU
Automotive Qualification — AEC-Q100

Datasheets & Resources

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