2EDR8258XXUMA1 vs 2ED2410EMXUMA1 Perbandingan

Perbandingan bersamaan detil 2EDR8258XXUMA1 dari Infineon dan 2ED2410EMXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2EDR8258XXUMA1 2ED2410EMXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Isolated single-channel gate driver —
Isolation Technology Magnetic (coreless transformer) coupling —
Number of Channels 1 —
Jumlah Output 2 (high-side and low-side, half-bridge) 2 (independent)
Peak Source Current 5 A —
Peak Sink Current 9 A —
Galvanic Isolation (rms) 5700 Vrms —
Galvanic Isolation (peak) 8000 Vpk —
Common-Mode Transient Immunity (CMTI) 150 V/ns —
Propagation Delay (typical) 38 ns —
Driver Supply Voltage (VCC, VBS) 8 V to 20 V —
Input Supply Voltage (VDD) 3 V to 5.5 V —
Rentang Suhu Kerja -40 °C to +125 °C -40 °C to +150 °C
Paket PG-DSO-14 (14-pin) PG-TSDSO-24 (exposed pad)
Protection Features UVLO (VCC/VBS), DESAT short-circuit, enable/shutdown, dead-time control, interleaving protection Enable/Shutdown, Overcurrent Protection (OCP), Interleaved Conduction Protection, Charge Pump
Logic Input Non-inverting, CMOS compatible —
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Driver Type — High-Side N-Channel MOSFET Gate Driver
Configuration — Non-Inverting
Supply Voltage Range (VS) — 8 V to 36 V
Logic/VBAT Voltage Range — 3 V to 58 V
Source Current (typ.) — 175 mA
Sink Current (typ.) — 350 mA
Waktu naik — 2 µs
Waktu Menurun — 7 µs
Logic Input Compatibility — 3.3 V and 5 V MCU
Automotive Qualification — AEC-Q100

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