2EDR8258XXUMA1 vs 2ED2410EMXUMA1 比較

詳細並排比較 2EDR8258XXUMA1 由 Infineon 與 2ED2410EMXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 2EDR8258XXUMA1 2ED2410EMXUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Product Type Isolated single-channel gate driver —
Isolation Technology Magnetic (coreless transformer) coupling —
Number of Channels 1 —
輸出數量 2 (high-side and low-side, half-bridge) 2 (independent)
Peak Source Current 5 A —
Peak Sink Current 9 A —
Galvanic Isolation (rms) 5700 Vrms —
Galvanic Isolation (peak) 8000 Vpk —
Common-Mode Transient Immunity (CMTI) 150 V/ns —
Propagation Delay (typical) 38 ns —
Driver Supply Voltage (VCC, VBS) 8 V to 20 V —
Input Supply Voltage (VDD) 3 V to 5.5 V —
工作溫度範圍 -40 °C to +125 °C -40 °C to +150 °C
封裝 PG-DSO-14 (14-pin) PG-TSDSO-24 (exposed pad)
Protection Features UVLO (VCC/VBS), DESAT short-circuit, enable/shutdown, dead-time control, interleaving protection Enable/Shutdown, Overcurrent Protection (OCP), Interleaved Conduction Protection, Charge Pump
Logic Input Non-inverting, CMOS compatible —
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant Compliant
Driver Type — High-Side N-Channel MOSFET Gate Driver
Configuration — Non-Inverting
Supply Voltage Range (VS) — 8 V to 36 V
Logic/VBAT Voltage Range — 3 V to 58 V
Source Current (typ.) — 175 mA
Sink Current (typ.) — 350 mA
上升時間 — 2 µs
下降時間 — 7 µs
Logic Input Compatibility — 3.3 V and 5 V MCU
Automotive Qualification — AEC-Q100

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