2EDR8258XXUMA1 vs 2ED2410EMXUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 2EDR8258XXUMA1 disebabkan oleh Infineon dan 2ED2410EMXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 2EDR8258XXUMA1 2ED2410EMXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Isolated single-channel gate driver —
Isolation Technology Magnetic (coreless transformer) coupling —
Number of Channels 1 —
Bilangan Output 2 (high-side and low-side, half-bridge) 2 (independent)
Peak Source Current 5 A —
Peak Sink Current 9 A —
Galvanic Isolation (rms) 5700 Vrms —
Galvanic Isolation (peak) 8000 Vpk —
Common-Mode Transient Immunity (CMTI) 150 V/ns —
Propagation Delay (typical) 38 ns —
Driver Supply Voltage (VCC, VBS) 8 V to 20 V —
Input Supply Voltage (VDD) 3 V to 5.5 V —
Gambaran Suhu Operasi -40 °C to +125 °C -40 °C to +150 °C
Kemasan PG-DSO-14 (14-pin) PG-TSDSO-24 (exposed pad)
Protection Features UVLO (VCC/VBS), DESAT short-circuit, enable/shutdown, dead-time control, interleaving protection Enable/Shutdown, Overcurrent Protection (OCP), Interleaved Conduction Protection, Charge Pump
Logic Input Non-inverting, CMOS compatible —
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant
Driver Type — High-Side N-Channel MOSFET Gate Driver
Configuration — Non-Inverting
Supply Voltage Range (VS) — 8 V to 36 V
Logic/VBAT Voltage Range — 3 V to 58 V
Source Current (typ.) — 175 mA
Sink Current (typ.) — 350 mA
Masa Pertambahan — 2 µs
Masa jatuh — 7 µs
Logic Input Compatibility — 3.3 V and 5 V MCU
Automotive Qualification — AEC-Q100

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