2EDR8258XXUMA1 vs 2ED2410EMXUMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng 2EDR8258XXUMA1 sa pamamagitan ng Infineon at 2ED2410EMXUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro 2EDR8258XXUMA1 2ED2410EMXUMA1
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Product Type Isolated single-channel gate driver —
Isolation Technology Magnetic (coreless transformer) coupling —
Number of Channels 1 —
Bilang ng Outputs 2 (high-side and low-side, half-bridge) 2 (independent)
Peak Source Current 5 A —
Peak Sink Current 9 A —
Galvanic Isolation (rms) 5700 Vrms —
Galvanic Isolation (peak) 8000 Vpk —
Common-Mode Transient Immunity (CMTI) 150 V/ns —
Propagation Delay (typical) 38 ns —
Driver Supply Voltage (VCC, VBS) 8 V to 20 V —
Input Supply Voltage (VDD) 3 V to 5.5 V —
Hanay ng Temperature na Operasyon -40 °C to +125 °C -40 °C to +150 °C
Packhaging PG-DSO-14 (14-pin) PG-TSDSO-24 (exposed pad)
Protection Features UVLO (VCC/VBS), DESAT short-circuit, enable/shutdown, dead-time control, interleaving protection Enable/Shutdown, Overcurrent Protection (OCP), Interleaved Conduction Protection, Charge Pump
Logic Input Non-inverting, CMOS compatible —
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant Compliant
Driver Type — High-Side N-Channel MOSFET Gate Driver
Configuration — Non-Inverting
Supply Voltage Range (VS) — 8 V to 36 V
Logic/VBAT Voltage Range — 3 V to 58 V
Source Current (typ.) — 175 mA
Sink Current (typ.) — 350 mA
Oras ng Pagtaas — 2 µs
Time ng Pagbaba — 7 µs
Logic Input Compatibility — 3.3 V and 5 V MCU
Automotive Qualification — AEC-Q100

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