6ED003L02F2XUMA1 vs 6EDL04N02PRXUMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng 6ED003L02F2XUMA1 sa pamamagitan ng Infineon at 6EDL04N02PRXUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
6EDL04N02PRXUMA1 6EDL04N02PRXUMA1 - 200V 3-Phase Gate Driver IC | Infineon

6EDL04N02PRXUMA1 - 200V 3-Phase Gate Driver IC | Infineon

6EDL04N02PRXUMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro 6ED003L02F2XUMA1 6EDL04N02PRXUMA1
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Product Type Three-phase gate driver IC 3-Phase Gate Driver IC
Topolohiya Half-bridge, 3-phase, high-side / low-side —
Bilang ng Outputs 6 (3 high-side + 3 low-side) —
Maximum Blocking Voltage 200 V +180 V (VS referenced to GND for high side)
Supported Power Switches 180 V-class IGBTs, power MOSFETs —
Gate Drive Current (typ.) 0.375 A (source/sink) —
Output Polarity Inverting —
Over-Current Protection (OCP) Integrated comparator with FAULT output —
Enable Input Yes (hardware shutdown) —
FAULT Reporting Yes (open-drain fault output) —
Level-shift Technology LS-SOI (Infineon proprietary) —
Packhaging PG-TSSOP-28 PG-TSSOP-28 (28-pin, 4.40 mm width, exposed pad)
Packaging Form Tape & Reel (XUMA1 suffix) —
Temperature na Operasyon -40 C to +125 C (industrial) —
Compliance EU RoHS compliant —
Uri ng Pagpapasok Surface Mount Surface Mount
Driver Configuration — Half-bridge (3 high-side + 3 low-side)
Rated Supply Voltage (VCC) — 200 V class (operating range 10 V to 20 V on VCC)
Source Current (typ.) — 0.375 A
Sink Current (typ.) — 0.75 A
Bootstrap Diode — Integrated (BSD) on all 3 high-side drivers
Over-Current Protection — Yes (single-shunt, ITRIP/CIN pin)
Enable Pin (EN) — Yes (active-high)
Fault Output (nFAULT) — Yes (active-low, open-drain)
Input Logic Compatibility — CMOS / LSTTL, 3.3 V and 5 V
Interlocking / Anti-shoot-through — Yes (built-in per phase pair)
Process Technology — Thin-film SOI (Silicon-On-Insulator)
Hanay ng Temperature na Operasyon — -40 °C to +125 °C
Maximum Junction Temperature — +150 °C
Target Switches — MOSFETs up to 180 V, IGBTs up to 180 V
Level ng MSL — MSL3 (per JEDEC J-STD-020, [DATA_NEEDED: confirm level])
Tindminan RoHS — Compliant

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