6ED003L02F2XUMA1 vs 6EDL04N02PRXUMA1 Karşılaştırma

Ayrıntılı yan yana karşılaştırma 6ED003L02F2XUMA1 tarafından Infineon ve 6EDL04N02PRXUMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Infineon
6EDL04N02PRXUMA1 6EDL04N02PRXUMA1 - 200V 3-Phase Gate Driver IC | Infineon

6EDL04N02PRXUMA1 - 200V 3-Phase Gate Driver IC | Infineon

6EDL04N02PRXUMA1 ✓ Aktif

Özellik Karşılaştırması

Parametre 6ED003L02F2XUMA1 6EDL04N02PRXUMA1
Marka Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Yaşam Döngüsü Durumu Aktif Aktif
Product Type Three-phase gate driver IC 3-Phase Gate Driver IC
Ağ Yapısı Half-bridge, 3-phase, high-side / low-side —
Çıkış Sayısı 6 (3 high-side + 3 low-side) —
Maximum Blocking Voltage 200 V +180 V (VS referenced to GND for high side)
Supported Power Switches 180 V-class IGBTs, power MOSFETs —
Gate Drive Current (typ.) 0.375 A (source/sink) —
Output Polarity Inverting —
Over-Current Protection (OCP) Integrated comparator with FAULT output —
Enable Input Yes (hardware shutdown) —
FAULT Reporting Yes (open-drain fault output) —
Level-shift Technology LS-SOI (Infineon proprietary) —
Paket PG-TSSOP-28 PG-TSSOP-28 (28-pin, 4.40 mm width, exposed pad)
Packaging Form Tape & Reel (XUMA1 suffix) —
İşletim Sıcaklığı -40 C to +125 C (industrial) —
Compliance EU RoHS compliant —
Montaj Türü Surface Mount Surface Mount
Driver Configuration — Half-bridge (3 high-side + 3 low-side)
Rated Supply Voltage (VCC) — 200 V class (operating range 10 V to 20 V on VCC)
Source Current (typ.) — 0.375 A
Sink Current (typ.) — 0.75 A
Bootstrap Diode — Integrated (BSD) on all 3 high-side drivers
Over-Current Protection — Yes (single-shunt, ITRIP/CIN pin)
Enable Pin (EN) — Yes (active-high)
Fault Output (nFAULT) — Yes (active-low, open-drain)
Input Logic Compatibility — CMOS / LSTTL, 3.3 V and 5 V
Interlocking / Anti-shoot-through — Yes (built-in per phase pair)
Process Technology — Thin-film SOI (Silicon-On-Insulator)
İşletim Sıcaklığı Aralığı — -40 °C to +125 °C
Maximum Junction Temperature — +150 °C
Target Switches — MOSFETs up to 180 V, IGBTs up to 180 V
MSL Seviyesi — MSL3 (per JEDEC J-STD-020, [DATA_NEEDED: confirm level])
RoHS Durumu — Compliant

Dökümanlar & Kaynaklar

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