AS4C512M16D4-75BIN vs K4A8G165WB-BCTD Comparison
Detailed side-by-side comparison of AS4C512M16D4-75BIN by Alliance Memory and K4A8G165WB-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Alliance Memory
AS4C512M16D4-75BIN
AS4C512M16D4-75BIN - 8Gbit DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4-75BIN β Active
Specification Comparison
| Parameter | AS4C512M16D4-75BIN | K4A8G165WB-BCTD |
|---|---|---|
| Brand | Alliance Memory | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $8.99 | $37.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gbit | β |
| Memory Organization | 512M x 16 | β |
| Clock Frequency | 1.333 GHz | β |
| Access Time | 18 ns | β |
| Write Cycle Time | 15 ns | β |
| Supply Voltage | 1.2 V | 1.2 V |
| Package | 96-FBGA (7.5x13) | 96-ball FBGA |
| Operating Temperature | -40Β°C to +95Β°C | 0Β°C to +95Β°C (TC) |
| Mounting Type | Surface Mount | β |
| Interface | POD | β |
| Data Rate | 2666 Mbps | 2666 Mbps/pin (PC4-2666) |
| Number of Pins | 96 | β |
| RoHS Status | Compliant | β |
| Features | Auto self-refresh, auto precharge, asynchronous reset, output enable, CRC, data mask, write leveling, dynamic ODT, ZQ calibration | β |
| Organization | β | 512M x 16 |
| Total Density | β | 8 Gb |
| CAS Latency | β | [DATA_NEEDED: CL value] |
| tRCD | β | [DATA_NEEDED: tRCD value] |
| tRP | β | [DATA_NEEDED: tRP value] |
| Refresh | β | Auto-refresh, self-refresh |
| On-Die Termination | β | Yes (ODT) |
| ZQ Calibration | β | Yes |
| Data Mask | β | Yes |
| RoHS | β | Compliant |