AS4C512M16D4-75BIN vs K4A8G165WB-BCTD Comparison
Detailed side-by-side comparison of AS4C512M16D4-75BIN by Alliance Memory and K4A8G165WB-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Alliance Memory
AS4C512M16D4-75BIN - 8Gbit DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4-75BIN ✓ ActiveSamsung Electronics
K4A8G165WB-BCTD - 8Gb DDR4 SDRAM 512Mx16 2666Mbps | Samsung
K4A8G165WB-BCTD ✓ ActiveSpecification Comparison
| Parameter | AS4C512M16D4-75BIN | K4A8G165WB-BCTD |
|---|---|---|
| Brand | Alliance Memory | Samsung Electronics |
| Category | Memory ICs | DRAM |
| Lifecycle Status | Active | Active |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gbit | — |
| Memory Organization | 512M x 16 | — |
| Clock Frequency | 1.333 GHz | — |
| Access Time | 18 ns | — |
| Write Cycle Time | 15 ns | — |
| Supply Voltage | 1.2 V | — |
| Package | 96-FBGA (7.5x13) | 96FBGA |
| Operating Temperature | -40°C to +95°C | 0C to +85C |
| Mounting Type | Surface Mount | Surface Mount (BGA) |
| Interface | POD | DDR4 (parallel, double data rate) |
| Data Rate | 2666 Mbps | 2666 Mbps |
| Number of Pins | 96 | — |
| RoHS Status | Compliant | Compliant (per JLCPCB listing: ROHS) |
| Features | Auto self-refresh, auto precharge, asynchronous reset, output enable, CRC, data mask, write leveling, dynamic ODT, ZQ calibration | — |
| Density | — | 8 Gb |
| Organization | — | 512M x 16 |
| Supply Voltage (VDD) | — | 1.2 V |
| Die Generation | — | B-die |
| Data Mask | — | Supported (DM per x16 lane) |
| ZQ Calibration | — | Supported |
| Dynamic On-Die Termination | — | Supported |
| CAS Latency | — | [DATA_NEEDED: CAS Latency] |
| Refresh Rate | — | [DATA_NEEDED: Refresh Rate] |
| Moisture Sensitivity Level | — | [DATA_NEEDED: MSL Level] |