AS4C512M16D4-75BIN vs K4A8G165WB-BCTD Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci AS4C512M16D4-75BIN disebabkan oleh Alliance Memory dan K4A8G165WB-BCTD disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Alliance Memory
AS4C512M16D4-75BIN - 8Gbit DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4-75BIN ✓ AktifSamsung Electronics
K4A8G165WB-BCTD - 8Gb DDR4 SDRAM 512Mx16 2666Mbps | Samsung
K4A8G165WB-BCTD ✓ AktifPengandingan Spesifikasi
| Parametr | AS4C512M16D4-75BIN | K4A8G165WB-BCTD |
|---|---|---|
| Merek | Alliance Memory | Samsung Electronics |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Saiz Ingatan | 8 Gbit | — |
| Memory Organization | 512M x 16 | — |
| Clock Frequency | 1.333 GHz | — |
| Access Time | 18 ns | — |
| Write Cycle Time | 15 ns | — |
| Tegangan Pemberi Arus | 1.2 V | — |
| Kemasan | 96-FBGA (7.5x13) | 96FBGA |
| Suhu Operasi | -40°C to +95°C | 0C to +85C |
| Jenis Pemasangan | Surface Mount | Surface Mount (BGA) |
| Antaramuka | POD | DDR4 (parallel, double data rate) |
| Kadar Data | 2666 Mbps | 2666 Mbps |
| Bilangan Pin | 96 | — |
| Status RoHS | Compliant | Compliant (per JLCPCB listing: ROHS) |
| Ciri-ciri | Auto self-refresh, auto precharge, asynchronous reset, output enable, CRC, data mask, write leveling, dynamic ODT, ZQ calibration | — |
| Density | — | 8 Gb |
| Organisasi | — | 512M x 16 |
| Supply Voltage (VDD) | — | 1.2 V |
| Die Generation | — | B-die |
| Data Mask | — | Supported (DM per x16 lane) |
| ZQ Calibration | — | Supported |
| Dynamic On-Die Termination | — | Supported |
| Latensi CAS | — | [DATA_NEEDED: CAS Latency] |
| Refresh Rate | — | [DATA_NEEDED: Refresh Rate] |
| Moisture Sensitivity Level | — | [DATA_NEEDED: MSL Level] |