BSC036NE7NS3GATMA1 vs IPG20N06S2L65ATMA1 Comparison

Detailed side-by-side comparison of BSC036NE7NS3GATMA1 by Infineon and IPG20N06S2L65ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC036NE7NS3GATMA1

BSC036NE7NS3GATMA1 - 75V 100A N-Channel OptiMOS 3 MOSFET | Infineon

BSC036NE7NS3GATMA1 βœ“ Active
Infineon
IPG20N06S2L65ATMA1

IPG20N06S2L65ATMA1 - Dual N-Ch 55V 20A MOSFET | Infineon

IPG20N06S2L65ATMA1 βœ“ Active

Specification Comparison

Parameter BSC036NE7NS3GATMA1 IPG20N06S2L65ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.82 $1.05
Manufacturer Infineon Technologies β€”
Series OptiMOS 3 β€”
FET Type N-Channel Dual N-Channel, Logic Level
Drain-Source Voltage (VDS) 75 V 55 V
Continuous Drain Current (ID, Tc=25C) 100 A β€”
Pulsed Drain Current (IDM) 400 A β€”
On-Resistance (RDS(on) max @ VGS=10V) 3.6 mOhm β€”
Gate Threshold Voltage (VGS(th) typ) 2.6 V β€”
Total Gate Charge (Qg typ @ VGS=10V) 45 nC β€”
Rise Time (tr typ) 13 ns β€”
Fall Time (tf typ) 11 ns β€”
Power Dissipation (PD max, Tc=25C) 156 W β€”
Power Dissipation (Ta=25C) 2.5 W β€”
Thermal Resistance, Junction-to-Case (RthJC) 0.8 C/W β€”
Operating Temperature Range -55C to +175C -55Β°C to +175Β°C
Package PG-TDSON-8-7 (5x6 mm) PG-TDSON-8-4 (TDSON-8 EP)
Mounting Type Surface Mount Surface Mount
RoHS Status ROHS3 Compliant β€”
MSL Level 1 MSL1 (260Β°C peak reflow)
Technology β€” OptiMOS-T2 (Planar Trench 55V)
Continuous Drain Current (ID) β€” 20 A per channel
RDS(on) at VGS=10V β€” 65 mΞ© typical
Gate Threshold Voltage (VGS(th)) β€” 1.0 V to 2.5 V (logic level)
Total Power Dissipation (Ptot) β€” 43 W
Avalanche Rating β€” 100% Avalanche Tested
Automotive Qualification β€” AEC-Q101 Qualified
RoHS Compliance β€” RoHS Compliant (Green Product)
Packaging β€” Tape & Reel (TMA1 suffix)

Datasheets & Resources

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