BSC036NE7NS3GATMA1 vs IPG20N06S2L65ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC036NE7NS3GATMA1 disebabkan oleh Infineon dan IPG20N06S2L65ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSC036NE7NS3GATMA1 - 75V 100A N-Channel OptiMOS 3 MOSFET | Infineon
BSC036NE7NS3GATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | BSC036NE7NS3GATMA1 | IPG20N06S2L65ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 3 | — |
| FET Type | N-Channel | Dual N-Channel, Logic Level |
| Drain-Source Voltage (VDS) | 75 V | 55 V |
| Continuous Drain Current (ID, Tc=25C) | 100 A | — |
| Pulsed Drain Current (IDM) | 400 A | — |
| On-Resistance (RDS(on) max @ VGS=10V) | 3.6 mOhm | — |
| Gate Threshold Voltage (VGS(th) typ) | 2.6 V | — |
| Total Gate Charge (Qg typ @ VGS=10V) | 45 nC | — |
| Rise Time (tr typ) | 13 ns | — |
| Fall Time (tf typ) | 11 ns | — |
| Power Dissipation (PD max, Tc=25C) | 156 W | — |
| Power Dissipation (Ta=25C) | 2.5 W | — |
| Thermal Resistance, Junction-to-Case (RthJC) | 0.8 C/W | — |
| Gambaran Suhu Operasi | -55C to +175C | -55°C to +175°C |
| Kemasan | PG-TDSON-8-7 (5x6 mm) | PG-TDSON-8-4 (TDSON-8 EP) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | ROHS3 Compliant | — |
| Aras MSL | 1 | MSL1 (260°C peak reflow) |
| Technology | — | OptiMOS-T2 (Planar Trench 55V) |
| Continuous Drain Current (ID) | — | 20 A per channel |
| RDS(on) at VGS=10V | — | 65 mΩ typical |
| Gate Threshold Voltage (VGS(th)) | — | 1.0 V to 2.5 V (logic level) |
| Total Power Dissipation (Ptot) | — | 43 W |
| Avalanche Rating | — | 100% Avalanche Tested |
| Automotive Qualification | — | AEC-Q101 Qualified |
| RoHS Compliance | — | RoHS Compliant (Green Product) |
| Packaging | — | Tape & Reel (TMA1 suffix) |