BSC036NE7NS3GATMA1 vs IPG20N06S2L65ATMA1 Perbandingan
Perbandingan bersamaan detil BSC036NE7NS3GATMA1 dari Infineon dan IPG20N06S2L65ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
BSC036NE7NS3GATMA1 - 75V 100A N-Channel OptiMOS 3 MOSFET | Infineon
BSC036NE7NS3GATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | BSC036NE7NS3GATMA1 | IPG20N06S2L65ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 3 | — |
| FET Type | N-Channel | Dual N-Channel, Logic Level |
| Drain-Source Voltage (VDS) | 75 V | 55 V |
| Continuous Drain Current (ID, Tc=25C) | 100 A | — |
| Pulsed Drain Current (IDM) | 400 A | — |
| On-Resistance (RDS(on) max @ VGS=10V) | 3.6 mOhm | — |
| Gate Threshold Voltage (VGS(th) typ) | 2.6 V | — |
| Total Gate Charge (Qg typ @ VGS=10V) | 45 nC | — |
| Rise Time (tr typ) | 13 ns | — |
| Fall Time (tf typ) | 11 ns | — |
| Power Dissipation (PD max, Tc=25C) | 156 W | — |
| Power Dissipation (Ta=25C) | 2.5 W | — |
| Thermal Resistance, Junction-to-Case (RthJC) | 0.8 C/W | — |
| Rentang Suhu Kerja | -55C to +175C | -55°C to +175°C |
| Paket | PG-TDSON-8-7 (5x6 mm) | PG-TDSON-8-4 (TDSON-8 EP) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Status RoHS | ROHS3 Compliant | — |
| Level MSL | 1 | MSL1 (260°C peak reflow) |
| Technology | — | OptiMOS-T2 (Planar Trench 55V) |
| Continuous Drain Current (ID) | — | 20 A per channel |
| RDS(on) at VGS=10V | — | 65 mΩ typical |
| Gate Threshold Voltage (VGS(th)) | — | 1.0 V to 2.5 V (logic level) |
| Total Power Dissipation (Ptot) | — | 43 W |
| Avalanche Rating | — | 100% Avalanche Tested |
| Automotive Qualification | — | AEC-Q101 Qualified |
| RoHS Compliance | — | RoHS Compliant (Green Product) |
| Packaging | — | Tape & Reel (TMA1 suffix) |