BSC036NE7NS3GATMA1 vs IPG20N06S2L65ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC036NE7NS3GATMA1 sa pamamagitan ng Infineon at IPG20N06S2L65ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPG20N06S2L65ATMA1 IPG20N06S2L65ATMA1 - Dual N-Ch 55V 20A MOSFET | Infineon

IPG20N06S2L65ATMA1 - Dual N-Ch 55V 20A MOSFET | Infineon

IPG20N06S2L65ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC036NE7NS3GATMA1 IPG20N06S2L65ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Series OptiMOS 3 —
FET Type N-Channel Dual N-Channel, Logic Level
Drain-Source Voltage (VDS) 75 V 55 V
Continuous Drain Current (ID, Tc=25C) 100 A —
Pulsed Drain Current (IDM) 400 A —
On-Resistance (RDS(on) max @ VGS=10V) 3.6 mOhm —
Gate Threshold Voltage (VGS(th) typ) 2.6 V —
Total Gate Charge (Qg typ @ VGS=10V) 45 nC —
Rise Time (tr typ) 13 ns —
Fall Time (tf typ) 11 ns —
Power Dissipation (PD max, Tc=25C) 156 W —
Power Dissipation (Ta=25C) 2.5 W —
Thermal Resistance, Junction-to-Case (RthJC) 0.8 C/W —
Hanay ng Temperature na Operasyon -55C to +175C -55°C to +175°C
Packhaging PG-TDSON-8-7 (5x6 mm) PG-TDSON-8-4 (TDSON-8 EP)
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS ROHS3 Compliant —
Level ng MSL 1 MSL1 (260°C peak reflow)
Technology — OptiMOS-T2 (Planar Trench 55V)
Continuous Drain Current (ID) — 20 A per channel
RDS(on) at VGS=10V — 65 mΩ typical
Gate Threshold Voltage (VGS(th)) — 1.0 V to 2.5 V (logic level)
Total Power Dissipation (Ptot) — 43 W
Avalanche Rating — 100% Avalanche Tested
Automotive Qualification — AEC-Q101 Qualified
RoHS Compliance — RoHS Compliant (Green Product)
Packaging — Tape & Reel (TMA1 suffix)

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