BSC074N15NS5ATMA1 vs IRLU3410PBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC074N15NS5ATMA1 disebabkan oleh Infineon dan IRLU3410PBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC074N15NS5ATMA1 IRLU3410PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel MOSFET —
Technology OptiMOS™ 5 trench —
Drain-Source Voltage (VDS) 150 V —
Continuous Drain Current (ID) at TC=25°C 114 A —
Power Dissition (PD) at TC=25°C 214 W —
On-Resistance RDS(on) max @ VGS=10V 7.4 mΩ —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Kemasan SuperSO8 5x6 (PG-TSON-8-3) with wettable flanks I-PAK (TO-251AA), through-hole
Jenis Pemasangan Surface Mount Through Hole
Gambaran Suhu Operasi [DATA_NEEDED: TJ min/max] —
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) typ] —
Total Gate Charge Qg [DATA_NEEDED: Qg total] —
Status RoHS Compliant —
Aras MSL [DATA_NEEDED: MSL rating] —
Body Diode Integrated —
Manufacturer — Infineon (formerly International Rectifier)
Part Number — IRLU3410PBF
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Tc=25C — 17 A
Continuous Drain Current (ID) at Tc=100C — 12 A
Drain-to-Source On-Resistance (RDS(on)) — 105 mOhm at VGS=10 V
Total Gate Charge (Qg) — 22.7 nC
Power Dissipation (PD) at Tc=25C — 79 W
Gate Threshold Voltage (VGS(th)) — Logic level
Suhu Hubungan Operasi — -55 C to +175 C
Avalanche Rated — Yes
RoHS / Lead-Free — Compliant (Pb-free)
HEXFET Generation — Fifth generation

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