BSC074N15NS5ATMA1 vs IRLU3410PBF Perbandingan
Perbandingan bersamaan detil BSC074N15NS5ATMA1 dari Infineon dan IRLU3410PBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC074N15NS5ATMA1 | IRLU3410PBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Transistor | N-Channel MOSFET | — |
| Technology | OptiMOS™ 5 trench | — |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at TC=25°C | 114 A | — |
| Power Dissition (PD) at TC=25°C | 214 W | — |
| On-Resistance RDS(on) max @ VGS=10V | 7.4 mΩ | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Paket | SuperSO8 5x6 (PG-TSON-8-3) with wettable flanks | I-PAK (TO-251AA), through-hole |
| Tipe Mounting | Surface Mount | Through Hole |
| Rentang Suhu Kerja | [DATA_NEEDED: TJ min/max] | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typ] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg total] | — |
| Status RoHS | Compliant | — |
| Level MSL | [DATA_NEEDED: MSL rating] | — |
| Body Diode | Integrated | — |
| Manufacturer | — | Infineon (formerly International Rectifier) |
| Part Number | — | IRLU3410PBF |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tc=25C | — | 17 A |
| Continuous Drain Current (ID) at Tc=100C | — | 12 A |
| Drain-to-Source On-Resistance (RDS(on)) | — | 105 mOhm at VGS=10 V |
| Total Gate Charge (Qg) | — | 22.7 nC |
| Power Dissipation (PD) at Tc=25C | — | 79 W |
| Gate Threshold Voltage (VGS(th)) | — | Logic level |
| Suhu Hubung Kerja | — | -55 C to +175 C |
| Avalanche Rated | — | Yes |
| RoHS / Lead-Free | — | Compliant (Pb-free) |
| HEXFET Generation | — | Fifth generation |