IRLU3410PBF - 100V 17A N-Ch HEXFET MOSFET | Infineon
MPN: IRLU3410PBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.84 | $0.84 |
| 10 | $0.72 | $7.20 |
| 100 | $0.55 | $55.00 |
| 500 | $0.43 | $215.00 |
| 1,000 | $0.36 | $360.00 |
IRLU3410PBF Overview
What is a HEXFET power MOSFET? A HEXFET (hexagonal cell) power MOSFET is an N-channel enhancement-mode power transistor that uses a hexagonal cellular layout to maximize channel width per unit silicon area, achieving lower RDS(on) than planar MOSFETs of equivalent die size. Power MOSFETs sit in the discrete semiconductor hierarchy as switching elements within power management circuits, where they are typically driven by a gate-driver IC and used to switch inductive or resistive loads such as motors, solenoids, relays, and DC/DC converter primary stages. The I-PAK (TO-251AA) variant offers a through-hole form factor compatible with wave soldering and chassis-mount heatsinking.
The IRLU3410PBF integrates a 175 C maximum junction temperature rating, fast intrinsic switching speed with a 22.7 nC total gate charge, and RoHS-compliant lead-free terminations. Logic-level VGS(th) compatibility eliminates the need for a bootstrap or charge pump on standard 5 V or 3.3 V microcontroller GPIO outputs, simplifying BOM and reducing standby current. The avalanche-rated body diode supports unclamped inductive switching events commonly encountered in motor and solenoid drive topologies.
Typical applications include low-voltage motor drive (12 V/24 V brushed DC and small BLDC stages), high-side/low-side solenoid switching, LED driver switching elements, DC/DC buck/boost converter synchronous rectifiers (low-side), battery protection and reverse-polarity switching, and audio amplifier output stages where its low RDS(on) minimizes conduction loss. The part is well-suited to industrial automation modules, e-bike controllers, and home appliance control boards.
When designing with this MOSFET, derate continuous drain current to package thermal limits; at 25 C case temperature the device handles 17 A, but at elevated ambient or with limited heatsinking the safe continuous current drops quickly. Gate drive should source/sink at least 1 A peak for fast switching transitions and to keep cross-conduction losses low in half-bridge topologies.
This page synthesizes distributor pricing, drop-in HEXFET alternatives, and practical design considerations not found in the bare datasheet, including a parametric comparison with surface-mount D-PAK and competing Chinese-designed equivalents.
Drop-in alternatives for IRLU3410PBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRLU3410PBF (same form factor and footprint) β differing in Mounting Type, Package.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRFU3410PBF
β Drop-Inπ Reference alternative (not in catalog)
IRLU3410PBF-EL
β Drop-Inπ Reference alternative (not in catalog)
IRLR3410PBF
β Drop-Inπ Reference alternative (not in catalog)
VBFB1101M
β Drop-Inπ Reference alternative (not in catalog)
BSC074N15NS5ATMA1
β Drop-Inβ In Stock
$1.45 / Unit
View Datasheet βIRLU3410PBF Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon (formerly International Rectifier) |
| Part Number | IRLU3410PBF |
| FET Type | N-Channel |
| Drain-to-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at Tc=25C | 17 A |
| Continuous Drain Current (ID) at Tc=100C | 12 A |
| Drain-to-Source On-Resistance (RDS(on)) | 105 mOhm at VGS=10 V |
| Total Gate Charge (Qg) | 22.7 nC |
| Power Dissipation (PD) at Tc=25C | 79 W |
| Gate Threshold Voltage (VGS(th)) | Logic level |
| Operating Junction Temperature | -55 C to +175 C |
| Package | I-PAK (TO-251AA), through-hole |
| Mounting Type | Through Hole |
| Avalanche Rated | Yes |
| RoHS / Lead-Free | Compliant (Pb-free) |
| HEXFET Generation | Fifth generation |
IRLU3410PBF Pin Configuration
| Pin 1 | Gate β Gate drive input; logic-level VGS(th), 4.5 V capable |
| Pin 2 | Drain β Drain terminal, electrically bonded to metal mounting tab |
| Pin 3 | Source β Source terminal |
Safe Operating Area - IRLU3410PBF
Typical Applications
IRLU3410PBF is suitable for 6 applications: 12V/24V Brushed DC Motor Drive, Solenoid and Relay Switching, Synchronous Rectifier in DC/DC Buck Converter, Battery Protection and Reverse-Polarity Switching, LED Driver Switching Element, Audio Amplifier Output Stage.
12V/24V Brushed DC Motor Drive
The IRLU3410PBF's 17 A continuous drain current at Tc=25 C and 100 V VDS rating make it ideal for brushed DC motor H-bridge or half-bridge switching in 12 V and 24 V systems. With 105 mOhm RDS(on) and logic-level VGS(th) drive capability, it can be driven directly from 5 V microcontroller GPIO without a dedicated gate driver, simplifying the BOM. Placed on the low-side of the motor winding with a flyback diode across the motor, the MOSFET handles PWM switching at 20-50 kHz typical motor control frequencies. The I-PAK package's metal tab bolts directly to a small heatsink or chassis, sinking up to 79 W at Tc=25 C. For an e-bike controller, 24 V cordless drill, or seat-motor module, the IRLU3410PBF provides proven Infineon HEXFET ruggedness at a sub-$1 price point.
Recommended
Solenoid and Relay Switching
The IRLU3410PBF is well-suited to switching inductive loads such as 24 V solenoids, latching relays, and valve coils where avalanche-rated body diode handling is critical. With 100 V VDS and full avalanche rating, the MOSFET absorbs the inductive kickback energy when the coil is de-energized without requiring an external flyback diode in many applications. The 17 A ID rating easily handles solenoid inrush currents and the steady-state holding current of industrial pneumatic valves. Logic-level gate drive means a 3.3 V or 5 V microcontroller GPIO or a low-side Darlington driver can switch the load directly. Through-hole I-PAK mounting is preferred in industrial control cabinets where chassis-mount heatsinking and screw-terminal wiring dominate the assembly process.
Recommended
Synchronous Rectifier in DC/DC Buck Converter
As a low-side synchronous rectifier in a 12 V-to-3.3 V/5 V buck converter, the IRLU3410PBF's 105 mOhm RDS(on) and 22.7 nC total gate charge minimize both conduction and switching losses at moderate switching frequencies (100-300 kHz). The 100 V rating provides generous headroom for 24 V input transients in industrial bus systems, while the logic-level gate threshold allows direct PWM drive from a 5 V synchronous-rectifier controller. The I-PAK package supports through-hole construction preferred in industrial power modules and telecom secondary-side rectification. For 5 A continuous output designs the IRLU3410PBF is at the upper thermal limit - designers should verify Tj rise at maximum load with appropriate copper pour and thermal vias.
Recommended
Battery Protection and Reverse-Polarity Switching
The IRLU3410PBF provides robust low-side reverse-polarity protection in 12 V and 24 V battery-powered systems. By placing the MOSFET in series with the load and sourcing the gate from the protected rail, the device blocks reverse battery connection by turning off when VGS becomes negative. The 100 V VDS rating easily tolerates automotive load-dump transients up to 40 V and inductive kickback. The 17 A continuous rating supports heavy accessory loads such as lighting bars and inverters. Logic-level gate drive allows direct drive from a battery management MCU GPIO or low-power voltage supervisor. Through-hole I-PAK mounting simplifies fuse-replacement-style serviceability and allows chassis-mount heatsinking for high-current applications.
Recommended
LED Driver Switching Element
The IRLU3410PBF serves as a constant-current regulator switching element in linear or buck-style LED drivers for industrial and architectural lighting. With 17 A ID rating and 100 V VDS, it easily handles multi-string LED arrays at 24 V or 48 V bus voltage, supporting high-brightness illumination up to several hundred watts. Logic-level gate drive allows direct PWM dimming from a microcontroller at 1 kHz+ dimming frequencies without requiring a dedicated gate driver, enabling precise dimming ratios below 1%. The I-PAK package's tab provides a convenient heatsink mounting point for high-current LED strings where conduction loss must be dissipated. For LED street-light, grow-light, and stadium-lighting drivers, the IRLU3410PBF is a cost-effective HEXFET switching element.
Recommended
Audio Amplifier Output Stage
The IRLU3410PBF can be used as an output-stage switching element in class-D audio amplifiers where its low RDS(on) of 105 mOhm and fast switching characteristics minimize both conduction and switching distortion. The 100 V VDS rating supports amplifier rails up to +/-50 V, enabling 200-500 W class-D amplifier designs. The fifth-generation HEXFET cell geometry reduces body-diode reverse-recovery charge, lowering dead-time distortion in the audio output stage. Logic-level gate drive simplifies the gate-driver design and allows direct 5 V or 3.3 V PWM input from a class-D modulator IC. Through-hole I-PAK mounting in audio amplifiers supports traditional chassis-mount heatsinks and simplifies hand-rework during amplifier development and service.
Recommended
Recommended Products Summary
Engineering reference data for IRLU3410PBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFU3410PBF | IRLR3410PBF | VBFB1101M |
|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | VBsemi |
| Package | I-PAK (TO-251AA) | I-PAK (TO-251AA) - same | D-PAK (TO-252AA) | I-PAK (TO-251AA) - same |
| Drain-to-Source Voltage (VDS) | 100 V | 100 V | 100 V | 100 V |
| On-Resistance (RDS(on)) | 105 mOhm | 105 mOhm | 105 mOhm | ~120 mOhm (estimated) |
| Gate Drive Level | Logic-level (4.5V) | Logic-level (4.5V) | Logic-level (4.5V) | Logic-level |
| Avalanche Rated | Yes | Yes | Yes | Yes |
| Mounting Type | Through Hole | Through Hole | Surface Mount (D-PAK) | Through Hole |
Key Differentiators
- Logic-level gate drive at 4.5 V VGS for direct MCU GPIO drive (vs IRF540N (standard 10V gate drive))
- Lower on-resistance for higher efficiency in motor drive (vs IRLU120NPBF (185 mOhm))
- Through-hole I-PAK package with chassis-mount heatsink capability (vs IRLR3410PBF (surface-mount D-PAK))
Design Notes
Estimated: at 24 V bus, 5 A continuous load, and 50% PWM duty, the IRLU3410PBF dissipates approximately (24V - Vload) x duty-cycle x I_rms. With a 24V/5A continuous load in linear mode, dissipation is ~5W steady. Using a 5x5 cm copper-clad PCB heatsink or a clip-on TO-220-style heatsink reduces theta_JA from 50 C/W (no heatsink) to ~25 C/W, keeping Tj well below the 175 C maximum. Verify with thermocouple measurements during worst-case continuous operation.
Keep the gate-drive loop area minimal by routing gate and source traces directly adjacent to each other. Place a 10-100 Ohm gate-source resistor close to the gate pin to suppress parasitic oscillation from gate-drain miller capacitance when switching high dV/dt nodes. For half-bridge topologies use a low-inductance DC-link bypass capacitor (1-10 uF ceramic + 100 uF electrolytic) within 1 cm of the low-side source to minimize switching-loop inductance and voltage overshoot.
Do not exceed the VGS=+/-20 V absolute maximum gate-source voltage; logic-level MOSFETs can be damaged by gate-source overvoltage from gate-driver bootstrap overshoot or static discharge. Add a 10 kOhm gate-source pull-down resistor to keep the MOSFET off during MCU power-up reset conditions. For avalanche-rated applications ensure unclamped inductive switching energy stays below the datasheet EAS rating; otherwise add an external TVS or snubber diode across the MOSFET.
Compliance Information
RoHS-compliant lead-free I-PAK package per Infineon product page; not AEC-Q100 qualified - use automotive-grade part such as IPC50N04S5L5R5ATMA1 for vehicle applications.
