BSC100N10NSFGATMA1 vs BSC265N10LSFGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC100N10NSFGATMA1 disebabkan oleh Infineon dan BSC265N10LSFGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC100N10NSFGATMA1 BSC265N10LSFGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS OptiMOS 2
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) OptiMOS 2 (TrenchFET)
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID), Ta 11.4 A —
Continuous Drain Current (ID), Tc 90 A —
Power Dissipation (PD), Tc 156 W —
Drain-Source On-Resistance (RDS(on)) max 10 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] [DATA_NEEDED: VGS(th) typical/min]
Kemasan PG-TDSON-8-1 (SuperSO8 5x6) PG-TDSON-8-1 (TDSON-8)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +150C (junction) -55 C to +150 C (junction)
Gate Drive Voltage (recommended) 10 V (for rated RDS(on)) —
Status RoHS Compliant Compliant
Continuous Drain Current (ID, Tc) — 40 A
Continuous Drain Current (ID, Ta) — 6.5 A
Power Dissipation (PD, Tc) — 78 W
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) max at VGS=10V]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total at VGS=10V]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss typical]
Aras MSL — 1 (per JEDEC J-STD-020)
Lead-Free — Yes
Avalanche Rated — Yes

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