BSC100N10NSFGATMA1 vs BSC265N10LSFGATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC100N10NSFGATMA1 sa pamamagitan ng Infineon at BSC265N10LSFGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro BSC100N10NSFGATMA1 BSC265N10LSFGATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Series OptiMOS OptiMOS 2
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) OptiMOS 2 (TrenchFET)
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID), Ta 11.4 A —
Continuous Drain Current (ID), Tc 90 A —
Power Dissipation (PD), Tc 156 W —
Drain-Source On-Resistance (RDS(on)) max 10 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] [DATA_NEEDED: VGS(th) typical/min]
Packhaging PG-TDSON-8-1 (SuperSO8 5x6) PG-TDSON-8-1 (TDSON-8)
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -55C to +150C (junction) -55 C to +150 C (junction)
Gate Drive Voltage (recommended) 10 V (for rated RDS(on)) —
Tindminan RoHS Compliant Compliant
Continuous Drain Current (ID, Tc) — 40 A
Continuous Drain Current (ID, Ta) — 6.5 A
Power Dissipation (PD, Tc) — 78 W
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) max at VGS=10V]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total at VGS=10V]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss typical]
Level ng MSL — 1 (per JEDEC J-STD-020)
Lead-Free — Yes
Avalanche Rated — Yes

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