BSS123IXTSA1 vs IRLML2060TRPBF Perbandingan
Perbandingan bersamaan detil BSS123IXTSA1 dari Infineon dan IRLML2060TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSS123IXTSA1 | IRLML2060TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Transistor | N-Channel MOSFET | — |
| Technology | OptiMOS Small-Signal | IR HEXFET (Trench Gate) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TA=25C | 190 mA | 1.2 A |
| Power Dissipation (PD) at TA=25C | 500 mW | 1.25 W |
| RDS(on) (typical, VGS=10 V) | 2.4 ohm | — |
| RDS(on) (max per family datasheet) | 6 ohm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) min/typ/max] | 1.8 V typical |
| Paket | PG-SOT-23-3 (SOT-23-3) | SOT-23 (Micro3, 3-pin) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55C to +150C (per family datasheet) | — |
| Qualification | Industrial | — |
| Configuration | Single N-Channel | — |
| Lead-Free / RoHS | Yes (per distributor listing) | — |
| Level MSL | [DATA_NEEDED: MSL rating] | MSL1 |
| Gate Drive Logic Level | Logic-level compatible | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Pulsed Drain Current (IDM) | — | 4.8 A |
| Gate-to-Source Voltage (VGS) max | — | +/- 12 V |
| RDS(on) max at VGS=10V | — | 480 mOhm |
| RDS(on) max at VGS=4.5V | — | 650 mOhm (typical 580 mOhm) |
| Thermal Resistance Junction-to-Ambient (RthetaJA) | — | 100 C/W |
| Suhu Hubung Kerja | — | -55C to +150C |
| Status RoHS | — | Compliant |
| Bebas Halogen | — | Yes |