BSS806NH6327XTSA1 vs BSS214NH6327XTSA1 Comparison
Detailed side-by-side comparison of BSS806NH6327XTSA1 by Infineon and BSS214NH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSS806NH6327XTSA1 - 20V N-Ch OptiMOS 2 MOSFET, SOT-23 | Infineon
BSS806NH6327XTSA1 β ActiveSpecification Comparison
| Parameter | BSS806NH6327XTSA1 | BSS214NH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.19 | $0.09 |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOS 2 (trench MOSFET) | OptiMOS 2 (planar N-channel) |
| Drain-Source Voltage (VDS) | 20 V | 20 V |
| Continuous Drain Current (ID, Ta) | 2.3 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Drain-Source On-Resistance (RDS(on) max) | 57 mΞ© | 250 mOhm at VGS = 4.5 V |
| Gate-Source Threshold Voltage (VGS(th)) | 1.8 V rated (logic level) | [DATA_NEEDED: VGS(th) typical and min/max values] |
| Gate Drive (recommended VGS) | 1.8 V to 10 V | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg] | β |
| Power Dissipation (PD, Ta) | 500 mW | β |
| Operating Temperature Range | -55 C to +150 C (junction) | -55C to +150C (junction) |
| Package | PG-SOT23-3 (SOT-23-3) | SOT-23 (PG-SOT23), 3 pins |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant (Pb-free plating) | Compliant |
| Automotive Qualification | AEC-Q101 qualified | β |
| Continuous Drain Current (ID) | β | 1.5 A (Ta) |
| Power Dissipation (PD) | β | 500 mW (Ta) |
| Gate-Source Voltage (VGS max) | β | Β±12 V (recommended) |
| Qualification | β | AEC-Q101 (Automotive) |
| Lead Finish | β | Pb-free lead plating (matte tin) |
| ESD Protection | β | Yes (gate ESD diode) |