BSS806NH6327XTSA1 vs BSS214NH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS806NH6327XTSA1 disebabkan oleh Infineon dan BSS214NH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSS214NH6327XTSA1 BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon

BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon

BSS214NH6327XTSA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSS806NH6327XTSA1 BSS214NH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Technology OptiMOS 2 (trench MOSFET) OptiMOS 2 (planar N-channel)
Drain-Source Voltage (VDS) 20 V 20 V
Continuous Drain Current (ID, Ta) 2.3 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Drain-Source On-Resistance (RDS(on) max) 57 mΩ 250 mOhm at VGS = 4.5 V
Gate-Source Threshold Voltage (VGS(th)) 1.8 V rated (logic level) [DATA_NEEDED: VGS(th) typical and min/max values]
Gate Drive (recommended VGS) 1.8 V to 10 V —
Total Gate Charge (Qg) [DATA_NEEDED: typical Qg] —
Power Dissipation (PD, Ta) 500 mW —
Gambaran Suhu Operasi -55 C to +150 C (junction) -55C to +150C (junction)
Kemasan PG-SOT23-3 (SOT-23-3) SOT-23 (PG-SOT23), 3 pins
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Status RoHS Compliant (Pb-free plating) Compliant
Automotive Qualification AEC-Q101 qualified —
Continuous Drain Current (ID) — 1.5 A (Ta)
Power Dissipation (PD) — 500 mW (Ta)
Gate-Source Voltage (VGS max) — ±12 V (recommended)
Qualification — AEC-Q101 (Automotive)
Lead Finish — Pb-free lead plating (matte tin)
ESD Protection — Yes (gate ESD diode)

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