BSS806NH6327XTSA1 vs BSS214NH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSS806NH6327XTSA1 dari Infineon dan BSS214NH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSS214NH6327XTSA1 BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon

BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon

BSS214NH6327XTSA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSS806NH6327XTSA1 BSS214NH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Technology OptiMOS 2 (trench MOSFET) OptiMOS 2 (planar N-channel)
Drain-Source Voltage (VDS) 20 V 20 V
Continuous Drain Current (ID, Ta) 2.3 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Drain-Source On-Resistance (RDS(on) max) 57 mΩ 250 mOhm at VGS = 4.5 V
Gate-Source Threshold Voltage (VGS(th)) 1.8 V rated (logic level) [DATA_NEEDED: VGS(th) typical and min/max values]
Gate Drive (recommended VGS) 1.8 V to 10 V —
Total Gate Charge (Qg) [DATA_NEEDED: typical Qg] —
Power Dissipation (PD, Ta) 500 mW —
Rentang Suhu Kerja -55 C to +150 C (junction) -55C to +150C (junction)
Paket PG-SOT23-3 (SOT-23-3) SOT-23 (PG-SOT23), 3 pins
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Status RoHS Compliant (Pb-free plating) Compliant
Automotive Qualification AEC-Q101 qualified —
Continuous Drain Current (ID) — 1.5 A (Ta)
Power Dissipation (PD) — 500 mW (Ta)
Gate-Source Voltage (VGS max) — ±12 V (recommended)
Qualification — AEC-Q101 (Automotive)
Lead Finish — Pb-free lead plating (matte tin)
ESD Protection — Yes (gate ESD diode)

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