BSZ036NE2LSATMA1 vs BSZ065N03LSATMA1 Comparison
Detailed side-by-side comparison of BSZ036NE2LSATMA1 by Infineon and BSZ065N03LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSZ036NE2LSATMA1 | BSZ065N03LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 25V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 25 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 16 A | 12 A |
| Continuous Drain Current (ID) at TC=25C | 40 A | 40 A |
| Power Dissipation (PD) at TA=25C | 2.1 W | 2.1 W |
| Power Dissipation (PD) at TC=25C | 37 W | 26 W |
| Package | PG-TSDSON-8-FL (5x6 mm) | — |
| Mounting Type | Surface Mount | Surface Mount |
| Configuration | Single | Single N-Channel |
| Operating Temperature Range | -55C to +150C | -55C to +150C (junction) |
| MSL Level | 1 (Unlimited) | 1 |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Gate Drive | Logic-level compatible | — |
| Series | — | OptiMOS 30V |
| Transistor Type | — | N-Channel MOSFET |
| Package / Case | — | PG-TSDSON-8-FL (S308) |
| Technology | — | Trench MOSFET (OptiMOS) |
| Gate Drive (typical) | — | 4.5 V |