BSZ036NE2LSATMA1 vs BSZ065N03LSATMA1 比較
詳細並排比較 BSZ036NE2LSATMA1 由 Infineon 與 BSZ065N03LSATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSZ036NE2LSATMA1 | BSZ065N03LSATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 25V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 25 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 16 A | 12 A |
| Continuous Drain Current (ID) at TC=25C | 40 A | 40 A |
| Power Dissipation (PD) at TA=25C | 2.1 W | 2.1 W |
| Power Dissipation (PD) at TC=25C | 37 W | 26 W |
| 封裝 | PG-TSDSON-8-FL (5x6 mm) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Configuration | Single | Single N-Channel |
| 工作溫度範圍 | -55C to +150C | -55C to +150C (junction) |
| MSL 等級 | 1 (Unlimited) | 1 |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Gate Drive | Logic-level compatible | — |
| Series | — | OptiMOS 30V |
| 電晶體類型 | — | N-Channel MOSFET |
| 封裝 / 外殼 | — | PG-TSDSON-8-FL (S308) |
| Technology | — | Trench MOSFET (OptiMOS) |
| Gate Drive (typical) | — | 4.5 V |