BSZ036NE2LSATMA1 vs BSZ065N03LSATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSZ036NE2LSATMA1 disebabkan oleh Infineon dan BSZ065N03LSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSZ036NE2LSATMA1 | BSZ065N03LSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 25V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 25 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 16 A | 12 A |
| Continuous Drain Current (ID) at TC=25C | 40 A | 40 A |
| Power Dissipation (PD) at TA=25C | 2.1 W | 2.1 W |
| Power Dissipation (PD) at TC=25C | 37 W | 26 W |
| Kemasan | PG-TSDSON-8-FL (5x6 mm) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Configuration | Single | Single N-Channel |
| Gambaran Suhu Operasi | -55C to +150C | -55C to +150C (junction) |
| Aras MSL | 1 (Unlimited) | 1 |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Gate Drive | Logic-level compatible | — |
| Series | — | OptiMOS 30V |
| Jenis Transistor | — | N-Channel MOSFET |
| Kemasan / Case | — | PG-TSDSON-8-FL (S308) |
| Technology | — | Trench MOSFET (OptiMOS) |
| Gate Drive (typical) | — | 4.5 V |