BSZ065N03LSATMA1 vs IPG20N06S2L65AATMA1 Perbandingan
Perbandingan bersamaan detil BSZ065N03LSATMA1 dari Infineon dan IPG20N06S2L65AATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSZ065N03LSATMA1 | IPG20N06S2L65AATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 30V | OptiMOS |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 12 A | — |
| Continuous Drain Current (ID) at TC=25C | 40 A | — |
| Power Dissipation (PD) at TA=25C | 2.1 W | — |
| Power Dissipation (PD) at TC=25C | 26 W | — |
| Paket / Case | PG-TSDSON-8-FL (S308) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Configuration | Single N-Channel | — |
| Technology | Trench MOSFET (OptiMOS) | OptiMOS Trench MOSFET |
| Rentang Suhu Kerja | -55C to +150C (junction) | — |
| Level MSL | 1 | MSL1 (peak reflow 260 C) |
| Status RoHS | Compliant | Compliant (Green Product) |
| Gate Drive (typical) | 4.5 V | — |
| FET Type | — | Dual N-Channel (Half Bridge / Independent) |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) | — | 20 A (per channel) |
| Power Dissipation (PD) | — | 43 W |
| Gate Threshold (VGS(th)) | — | Logic-Level |
| Paket | — | PG-TDSON-8-10 (TDSON-8 EP, wettable flank) |
| Suhu Kerja | — | -55 C to +175 C |
| AEC-Q101 Qualification | — | Yes |
| Avalanche Tested | — | 100% (per datasheet) |
| AOI Compatible | — | Yes (wettable flank) |