BSZ065N03LSATMA1 vs IPG20N06S2L65AATMA1 比較
詳細並排比較 BSZ065N03LSATMA1 由 Infineon 與 IPG20N06S2L65AATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSZ065N03LSATMA1 | IPG20N06S2L65AATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 30V | OptiMOS |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 12 A | — |
| Continuous Drain Current (ID) at TC=25C | 40 A | — |
| Power Dissipation (PD) at TA=25C | 2.1 W | — |
| Power Dissipation (PD) at TC=25C | 26 W | — |
| 封裝 / 外殼 | PG-TSDSON-8-FL (S308) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Configuration | Single N-Channel | — |
| Technology | Trench MOSFET (OptiMOS) | OptiMOS Trench MOSFET |
| 工作溫度範圍 | -55C to +150C (junction) | — |
| MSL 等級 | 1 | MSL1 (peak reflow 260 C) |
| RoHS 狀態 | Compliant | Compliant (Green Product) |
| Gate Drive (typical) | 4.5 V | — |
| FET Type | — | Dual N-Channel (Half Bridge / Independent) |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) | — | 20 A (per channel) |
| Power Dissipation (PD) | — | 43 W |
| Gate Threshold (VGS(th)) | — | Logic-Level |
| 封裝 | — | PG-TDSON-8-10 (TDSON-8 EP, wettable flank) |
| 工作溫度 | — | -55 C to +175 C |
| AEC-Q101 Qualification | — | Yes |
| Avalanche Tested | — | 100% (per datasheet) |
| AOI Compatible | — | Yes (wettable flank) |