E3AD8G16A4-HR vs NT5AD512M16C4-HR Comparison
Detailed side-by-side comparison of E3AD8G16A4-HR by ELIXIR/NANYA and NT5AD512M16C4-HR by Nanya Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | E3AD8G16A4-HR | NT5AD512M16C4-HR |
|---|---|---|
| Brand | ELIXIR/NANYA | Nanya Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Organization | 512M x 16 | 512M x 16 |
| Density | 8 Gb | 8 Gbit |
| Supply Voltage | 1.2 V | 1.2 V |
| Package | TFBGA-96 | FBGA-96 (TFBGA) |
| Data Rate | 3200 MT/s | 1.333 GHz (DDR4-2666) |
| CAS Latency | 22 | — |
| Burst Length | 8 (BC4 optional) | — |
| Number of Banks | 16 (4 bank groups) | — |
| Refresh | Auto-refresh and self-refresh | — |
| Operating Temperature | 0C to +95C (TCASE) | 0°C to +95°C |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Mounting Type | Surface Mount | — |
| Speed Grade | DDR4-3200 | — |
| Number of Pins | — | 96 |
| Auto Self-Refresh | — | Yes |
| Built-in Temperature Sensor | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| Write Leveling | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |
| CRC Function | — | Yes |