EP3C10F256I7 vs EP3C10F256C6 Comparison

Detailed side-by-side comparison of EP3C10F256I7 by Intel and EP3C10F256C6 by Intel. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter EP3C10F256I7 EP3C10F256C6
Brand Intel Intel
Category FPGA & CPLD FPGA & CPLD
Lifecycle Status NRND Active
Device Type Cyclone III Field Programmable Gate Array (FPGA) —
Logic Cells 10,320 logic cells —
Embedded Memory 423,936 bits —
I/O Count 182 I/O pins —
Total Terminals 256 terminals —
Package Type 256-LBGA —
Package Family LBGA —
Package Shape Square —
Mounting Type Surface Mount Surface Mount (BGA)
Terminal Form Ball —
Operating Temperature -40°C to +125°C -40 C to +125 C (industrial, suffix 'C')
Temperature Grade Industrial —
Supply Voltage [DATA_NEEDED: supply voltage range] —
Core Voltage [DATA_NEEDED: core voltage] —
I/O Standard [DATA_NEEDED: supported I/O standards] —
Configuration Interface [DATA_NEEDED: configuration interfaces] —
Lead-Free Status Lead Free —
RoHS Status [DATA_NEEDED: RoHS status] Compliant (lead-free FBGA)
REACH Status [DATA_NEEDED: REACH status] —
Manufacturer Family Cyclone III —
Logic Block Count 10,320 logic blocks —
Family — Cyclone III
Logic Elements (LE) — 10,320
Total Memory Bits — 423,936 bits
Embedded 18x18 Multipliers — 23
PLLs — 2
Maximum User I/Os — 182
Package — 256-FBGA (FineLine BGA, 17x17 mm, 1.0 mm pitch)
Core Voltage (VCCINT) — 1.15 V to 1.25 V (typ. 1.2 V)
I/O Voltage (VCCIO) — 1.2 V to 3.3 V (bank-dependent)
Process Technology — 60 nm low-power CMOS
Configuration Memory — SRAM-based (external EPCS flash required)
Speed Grade — 6
MSL Level — 3 (168 hours)

Datasheets & Resources

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