EP3C10F256I7 vs EP3C10F256C6 Vergleich

Detaillierter Direktvergleich von EP3C10F256I7 von Intel und EP3C10F256C6 von Intel. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter EP3C10F256I7 EP3C10F256C6
Marke Intel Intel
Kategorie FPGA & CPLD FPGA & CPLD
Lebenszyklusstatus NRND Aktiv
Device Type Cyclone III Field Programmable Gate Array (FPGA) —
Logic Cells 10,320 logic cells —
Embedded Memory 423,936 bits —
I/O Count 182 I/O pins —
Total Terminals 256 terminals —
Package Type 256-LBGA —
Package Family LBGA —
Package Shape Square —
Montageart Surface Mount Surface Mount (BGA)
Terminal Form Ball —
Betriebstemperatur -40°C to +125°C -40 C to +125 C (industrial, suffix 'C')
Temperature Grade Industrial —
Versorgungsspannung [DATA_NEEDED: supply voltage range] —
Core Voltage [DATA_NEEDED: core voltage] —
I/O Standard [DATA_NEEDED: supported I/O standards] —
Configuration Interface [DATA_NEEDED: configuration interfaces] —
Lead-Free Status Lead Free —
RoHS-Status [DATA_NEEDED: RoHS status] Compliant (lead-free FBGA)
REACH Status [DATA_NEEDED: REACH status] —
Manufacturer Family Cyclone III —
Logic Block Count 10,320 logic blocks —
Family — Cyclone III
Logic Elements (LE) — 10,320
Total Memory Bits — 423,936 bits
Embedded 18x18 Multipliers — 23
PLLs — 2
Maximum User I/Os — 182
Gehäuse — 256-FBGA (FineLine BGA, 17x17 mm, 1.0 mm pitch)
Core Voltage (VCCINT) — 1.15 V to 1.25 V (typ. 1.2 V)
I/O Voltage (VCCIO) — 1.2 V to 3.3 V (bank-dependent)
Process Technology — 60 nm low-power CMOS
Configuration Memory — SRAM-based (external EPCS flash required)
Speed Grade — 6
MSL-Level — 3 (168 hours)

Datenblätter & Ressourcen

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