EP3C10F256I7 vs EP3C10F256C6 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng EP3C10F256I7 sa pamamagitan ng Intel at EP3C10F256C6 sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro EP3C10F256I7 EP3C10F256C6
Brand Intel Intel
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle NRND Aktibo
Device Type Cyclone III Field Programmable Gate Array (FPGA) —
Logic Cells 10,320 logic cells —
Embedded Memory 423,936 bits —
I/O Count 182 I/O pins —
Total Terminals 256 terminals —
Package Type 256-LBGA —
Package Family LBGA —
Package Shape Square —
Uri ng Pagpapasok Surface Mount Surface Mount (BGA)
Terminal Form Ball —
Temperature na Operasyon -40°C to +125°C -40 C to +125 C (industrial, suffix 'C')
Temperature Grade Industrial —
Volte ng Pagbibigay [DATA_NEEDED: supply voltage range] —
Core Voltage [DATA_NEEDED: core voltage] —
I/O Standard [DATA_NEEDED: supported I/O standards] —
Configuration Interface [DATA_NEEDED: configuration interfaces] —
Lead-Free Status Lead Free —
Tindminan RoHS [DATA_NEEDED: RoHS status] Compliant (lead-free FBGA)
REACH Status [DATA_NEEDED: REACH status] —
Manufacturer Family Cyclone III —
Logic Block Count 10,320 logic blocks —
Family — Cyclone III
Logic Elements (LE) — 10,320
Total Memory Bits — 423,936 bits
Embedded 18x18 Multipliers — 23
PLLs — 2
Maximum User I/Os — 182
Packhaging — 256-FBGA (FineLine BGA, 17x17 mm, 1.0 mm pitch)
Core Voltage (VCCINT) — 1.15 V to 1.25 V (typ. 1.2 V)
I/O Voltage (VCCIO) — 1.2 V to 3.3 V (bank-dependent)
Process Technology — 60 nm low-power CMOS
Configuration Memory — SRAM-based (external EPCS flash required)
Speed Grade — 6
Level ng MSL — 3 (168 hours)

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