EP3C10F256I7 vs EP3C10F256C6 对比

详细并排对比 EP3C10F256I7 出自 Intel 和 EP3C10F256C6 出自 Intel。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 EP3C10F256I7 EP3C10F256C6
品牌 Intel Intel
分类 FPGA & CPLD FPGA & CPLD
生命周期状态 不推荐新设计 有效
Device Type Cyclone III Field Programmable Gate Array (FPGA) —
Logic Cells 10,320 logic cells —
Embedded Memory 423,936 bits —
I/O Count 182 I/O pins —
Total Terminals 256 terminals —
Package Type 256-LBGA —
Package Family LBGA —
Package Shape Square —
安装类型 Surface Mount Surface Mount (BGA)
Terminal Form Ball —
工作温度 -40°C to +125°C -40 C to +125 C (industrial, suffix 'C')
Temperature Grade Industrial —
电源电压 [DATA_NEEDED: supply voltage range] —
Core Voltage [DATA_NEEDED: core voltage] —
I/O Standard [DATA_NEEDED: supported I/O standards] —
Configuration Interface [DATA_NEEDED: configuration interfaces] —
Lead-Free Status Lead Free —
RoHS 状态 [DATA_NEEDED: RoHS status] Compliant (lead-free FBGA)
REACH Status [DATA_NEEDED: REACH status] —
Manufacturer Family Cyclone III —
Logic Block Count 10,320 logic blocks —
Family — Cyclone III
Logic Elements (LE) — 10,320
Total Memory Bits — 423,936 bits
Embedded 18x18 Multipliers — 23
PLLs — 2
Maximum User I/Os — 182
封装 — 256-FBGA (FineLine BGA, 17x17 mm, 1.0 mm pitch)
Core Voltage (VCCINT) — 1.15 V to 1.25 V (typ. 1.2 V)
I/O Voltage (VCCIO) — 1.2 V to 3.3 V (bank-dependent)
Process Technology — 60 nm low-power CMOS
Configuration Memory — SRAM-based (external EPCS flash required)
Speed Grade — 6
MSL 等级 — 3 (168 hours)

数据手册与资源

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