FDD8896-F085 vs FDD8896 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng FDD8896-F085 sa pamamagitan ng onsemi at FDD8896 sa pamamagitan ng onsemi. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro FDD8896-F085 FDD8896
Brand onsemi onsemi
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Obsolete Tapus ng Buhay
Manufacturer onsemi (Fairchild Semiconductor) Fairchild Semiconductor (now onsemi)
FET Type N-Channel MOSFET —
Technology PowerTrench (Trench-Gate) PowerTrench (trench MOSFET)
Drain-Source Voltage (Vdss) 30 V 30 V
Continuous Drain Current (Id) at Tc=25C 94 A —
Continuous Drain Current (Id) at Ta=25C 17 A —
Rds(on) Max at Vgs=10V 5.7 mOhm —
Maximum Power Dissipation (Pd) at Tc=25C 80 W —
Gate-Source Voltage (Vgs) Max 20 V [DATA_NEEDED: Vgs Max]
Gate Threshold Voltage (Vgs(th)) Typ 2.0 V —
Hanay ng Temperature na Operasyon -55C to +150C (Tj) —
Packhaging TO-252 (DPAK) TO-252 (DPAK), 3-Pin (2+Tab)
Uri ng Pagpapasok Surface Mount Surface Mount
Bilang ng Pin 3 (Gate, Drain, Source) 3
Automotive Qualification AEC-Q101 —
RoHS / Halogen-Free Status Compliant / Halogen-Free —
Lead-Free Yes —
Level ng MSL 1 —
Uri ng Transistor — N-Channel PowerTrench MOSFET
Continuous Drain Current (Id) at Ta — 17 A
Continuous Drain Current (Id) at Tc — 94 A
Drain-Source On-Resistance (rDS(ON)) — 5.7 mOhm
Power Dissipation (Pd) at Tc — 80 W
Gate Charge (Qg) — [DATA_NEEDED: Gate Charge]
Configuration — Single FET
Typical Application — DC/DC converters, synchronous PWM controllers
Packing — Tape & Reel (T/R)

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita