FDS6575 vs IRF7306TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci FDS6575 disebabkan oleh onsemi dan IRF7306TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr FDS6575 IRF7306TRPBF
Merek onsemi Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity P-Channel P-Channel (dual)
Drain-Source Voltage (VDS) -20 V —
Continuous Drain Current (ID) -10 A -3.6 A at 25°C
On-Resistance (RDS(on)) 13 mOhm max at VGS = -4.5 V —
Gate Drive Voltage Range 2.5 V to 8 V —
Tegangan Had Kepasaran [DATA_NEEDED: gate threshold voltage range] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Technology PowerTrench (rugged gate) HEXFET Power MOSFET (Generation V)
Kemasan SOIC-8 (SO-8) 8-SOIC (SO-8, 0.154 inch / 3.90 mm body width)
Jenis Pemasangan Surface Mount Surface Mount
Power Dissipation [DATA_NEEDED: power dissipation at TA] —
Gambaran Suhu Operasi [DATA_NEEDED: operating temperature range] -55°C to +150°C (junction)
Configuration Single MOSFET —
Gate Source Voltage (VGS) Range [DATA_NEEDED: VGS max rating] —
Status RoHS Compliant —
Number of Channels — 2 (independent, in single package)
Drain-to-Source Voltage (VDS) — -30 V
On-Resistance RDS(on) max — 100 mOhm at VGS = -10 V
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge Qg — [DATA_NEEDED: Qg total]
Maximum Power Dissipation — 2 W at TA = 25°C
Packaging — Tape & Reel (TR)
Aras MSL — 1 (per JEDEC J-STD-020)
RoHS Compliance — Yes (PBF suffix indicates Pb-free)
Qualification — Consumer market qualification standards (per IR/Infineon datasheet)
Avalanche Rated — Yes (ruggedized device per datasheet)

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