FF1400R17T2P8 vs FF2000R17T2P8 Perbandingan

Perbandingan bersamaan detil FF1400R17T2P8 dari Infineon dan FF2000R17T2P8 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum FF1400R17T2P8 FF2000R17T2P8
Merek Infineon Infineon
Kategori IGBTs IGBTs
Status Lingkungan Hidup Aktif Aktif
Technology TRENCHSTOP IGBT8, EC8 diode —
Configuration Half-bridge (Chopper 2) —
Paket XHP 2 (AG-XHP2K17) —
Collector-Emitter Voltage (VCES) 1700 V 1700 V
Nominal Collector Current (IC nom) 1400 A —
Repetitive Peak Collector Current (ICRM) 2800 A —
Maximum Junction Temperature 175 C —
Integrated Temperature Sensor NTC thermistor NTC
Freewheeling Diode EC8 emitter controlled, soft fast recovery —
Qualification Industrial, per relevant tests of IEC 60747, 60749, 60068 —
Tipe Mounting Chassis Mount Chassis Mount Module
DC-Link Voltage Class Approx. 1000 V to 1100 V typical —
Module Stray Inductance [DATA_NEEDED: internal stray inductance] —
Thermal Resistance Junction to Case (RthJC IGBT) [DATA_NEEDED: RthJC per IGBT] —
Gate-Emitter Threshold Voltage [DATA_NEEDED: VGE(th)] —
Dissipasi Listrik (Ptot) [DATA_NEEDED: total power dissipation] —
Status RoHS [DATA_NEEDED: RoHS status] unknown
Topologi — Half-Bridge (2-in-1)
Package Platform — XHP 2 (XHPTM2)
Nominal DC Collector Current — 2000 A
IGBT Technology — TRENCHSTOP IGBT8 trench field-stop
Diode Technology — Emitter controlled 8 (EC8) soft recovery
Applications Grade — Industrial / traction / wind
Short-Circuit Capability — Short-circuit rated per datasheet
Tegangan Saturasi Pemisah-Penjana (Vce(sat)) — [DATA_NEEDED: VCE(sat) typical]
Gate-Emitter Voltage (VGES) — [DATA_NEEDED: maximum VGES]
Thermal Resistance Junction to Case (RthJC) — [DATA_NEEDED: RthJC per IGBT]
Suhu Hubung Kerja — [DATA_NEEDED: Tj range]
Power Dissipation — [DATA_NEEDED: maximum Ptot]

Spek dan Sumber

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