FF1400R17T2P8 vs FF2000R17T2P8 مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ FF1400R17T2P8 بواسطة Infineon و FF2000R17T2P8 بواسطة Infineon. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | FF1400R17T2P8 | FF2000R17T2P8 |
|---|---|---|
| العلامة التجارية | Infineon | Infineon |
| الفئة | IGBTs | IGBTs |
| حالة دورة الحياة | نشط | نشط |
| Technology | TRENCHSTOP IGBT8, EC8 diode | — |
| Configuration | Half-bridge (Chopper 2) | — |
| العلبة | XHP 2 (AG-XHP2K17) | — |
| Collector-Emitter Voltage (VCES) | 1700 V | 1700 V |
| Nominal Collector Current (IC nom) | 1400 A | — |
| Repetitive Peak Collector Current (ICRM) | 2800 A | — |
| Maximum Junction Temperature | 175 C | — |
| Integrated Temperature Sensor | NTC thermistor | NTC |
| Freewheeling Diode | EC8 emitter controlled, soft fast recovery | — |
| Qualification | Industrial, per relevant tests of IEC 60747, 60749, 60068 | — |
| نوع التركيب | Chassis Mount | Chassis Mount Module |
| DC-Link Voltage Class | Approx. 1000 V to 1100 V typical | — |
| Module Stray Inductance | [DATA_NEEDED: internal stray inductance] | — |
| Thermal Resistance Junction to Case (RthJC IGBT) | [DATA_NEEDED: RthJC per IGBT] | — |
| Gate-Emitter Threshold Voltage | [DATA_NEEDED: VGE(th)] | — |
| تبديد القدرة (Ptot) | [DATA_NEEDED: total power dissipation] | — |
| حالة RoHS | [DATA_NEEDED: RoHS status] | unknown |
| البنية الطوبولوجية | — | Half-Bridge (2-in-1) |
| Package Platform | — | XHP 2 (XHPTM2) |
| Nominal DC Collector Current | — | 2000 A |
| IGBT Technology | — | TRENCHSTOP IGBT8 trench field-stop |
| Diode Technology | — | Emitter controlled 8 (EC8) soft recovery |
| Applications Grade | — | Industrial / traction / wind |
| Short-Circuit Capability | — | Short-circuit rated per datasheet |
| جهد التشبع للمجمّع-الباعث (Vce(sat)) | — | [DATA_NEEDED: VCE(sat) typical] |
| Gate-Emitter Voltage (VGES) | — | [DATA_NEEDED: maximum VGES] |
| Thermal Resistance Junction to Case (RthJC) | — | [DATA_NEEDED: RthJC per IGBT] |
| درجة حرارة الوصلة التشغيلية | — | [DATA_NEEDED: Tj range] |
| Power Dissipation | — | [DATA_NEEDED: maximum Ptot] |