FF1400R17T2P8 vs FF2000R17T2P8 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci FF1400R17T2P8 disebabkan oleh Infineon dan FF2000R17T2P8 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | FF1400R17T2P8 | FF2000R17T2P8 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | IGBTs | IGBTs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | TRENCHSTOP IGBT8, EC8 diode | — |
| Configuration | Half-bridge (Chopper 2) | — |
| Kemasan | XHP 2 (AG-XHP2K17) | — |
| Collector-Emitter Voltage (VCES) | 1700 V | 1700 V |
| Nominal Collector Current (IC nom) | 1400 A | — |
| Repetitive Peak Collector Current (ICRM) | 2800 A | — |
| Maximum Junction Temperature | 175 C | — |
| Integrated Temperature Sensor | NTC thermistor | NTC |
| Freewheeling Diode | EC8 emitter controlled, soft fast recovery | — |
| Qualification | Industrial, per relevant tests of IEC 60747, 60749, 60068 | — |
| Jenis Pemasangan | Chassis Mount | Chassis Mount Module |
| DC-Link Voltage Class | Approx. 1000 V to 1100 V typical | — |
| Module Stray Inductance | [DATA_NEEDED: internal stray inductance] | — |
| Thermal Resistance Junction to Case (RthJC IGBT) | [DATA_NEEDED: RthJC per IGBT] | — |
| Gate-Emitter Threshold Voltage | [DATA_NEEDED: VGE(th)] | — |
| Pembuangan Kuasa (Ptot) | [DATA_NEEDED: total power dissipation] | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | unknown |
| Tetstruktur | — | Half-Bridge (2-in-1) |
| Package Platform | — | XHP 2 (XHPTM2) |
| Nominal DC Collector Current | — | 2000 A |
| IGBT Technology | — | TRENCHSTOP IGBT8 trench field-stop |
| Diode Technology | — | Emitter controlled 8 (EC8) soft recovery |
| Applications Grade | — | Industrial / traction / wind |
| Short-Circuit Capability | — | Short-circuit rated per datasheet |
| Tegangan Pengumpul-Pemancar (Vce(sat)) | — | [DATA_NEEDED: VCE(sat) typical] |
| Gate-Emitter Voltage (VGES) | — | [DATA_NEEDED: maximum VGES] |
| Thermal Resistance Junction to Case (RthJC) | — | [DATA_NEEDED: RthJC per IGBT] |
| Suhu Hubungan Operasi | — | [DATA_NEEDED: Tj range] |
| Power Dissipation | — | [DATA_NEEDED: maximum Ptot] |