H5AN8G6NAFR-UHC vs K4A8G085WC-BCTD Comparison
Detailed side-by-side comparison of H5AN8G6NAFR-UHC by SK hynix and K4A8G085WC-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung
K4A8G085WC-BCTD ⚠ Last Time BuySpecification Comparison
| Parameter | H5AN8G6NAFR-UHC | K4A8G085WC-BCTD |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Last Time Buy |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $5.74 | $50.85 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 1G x 8 |
| Supply Voltage | 1.2 V | — |
| Data Rate | 2400 MT/s | 2666 Mbps (PC4-2133) |
| Package | FBGA-96 | 78-ball FBGA (78FBGA) |
| Operating Temperature | 0°C to +85°C | 0C to +95C |
| Number of Terminals | 96 | — |
| Package Code | TFBGA | — |
| Lead-Free | Yes | — |
| Halogen Free | Yes | — |
| RoHS Compliant | Yes | — |
| CAS Latency | [DATA_NEEDED: CAS Latency] | — |
| Burst Length | 8, 4 (with burst chop) | 8 (chop 4) |
| Refresh | Auto self-refresh | — |
| Supply Voltage (VDD/VDDQ) | — | 1.2 V (1.14 V to 1.26 V) |
| Ball Pitch | — | 0.8 mm |
| Standard Operating Temp Range | — | 0C to +85C |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic ODT | — | Yes |
| Data Mask | — | Yes |
| Interface Type | — | Synchronous, parallel |
| Mounting Type | — | Surface Mount |
| RoHS Status | — | [DATA_NEEDED: RoHS status] |