H5AN8G6NAFR-UHC vs K4A8G085WC-BCTD 对比
详细并排对比 H5AN8G6NAFR-UHC 出自 SK hynix 和 K4A8G085WC-BCTD 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung
K4A8G085WC-BCTD ⚠ 最后一次采购规格对比
| 参数 | H5AN8G6NAFR-UHC | K4A8G085WC-BCTD |
|---|---|---|
| 品牌 | SK hynix | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 最后采购期 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $5.74 | $50.85 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| 存储组织 | 512M x 16 | 1G x 8 |
| 电源电压 | 1.2 V | — |
| 数据速率 | 2400 MT/s | 2666 Mbps (PC4-2133) |
| 封装 | FBGA-96 | 78-ball FBGA (78FBGA) |
| 工作温度 | 0°C to +85°C | 0C to +95C |
| Number of Terminals | 96 | — |
| Package Code | TFBGA | — |
| Lead-Free | Yes | — |
| 无卤 | Yes | — |
| RoHS Compliant | Yes | — |
| CAS 延迟 | [DATA_NEEDED: CAS Latency] | — |
| Burst Length | 8, 4 (with burst chop) | 8 (chop 4) |
| Refresh | Auto self-refresh | — |
| Supply Voltage (VDD/VDDQ) | — | 1.2 V (1.14 V to 1.26 V) |
| Ball Pitch | — | 0.8 mm |
| Standard Operating Temp Range | — | 0C to +85C |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic ODT | — | Yes |
| Data Mask | — | Yes |
| 接口类型 | — | Synchronous, parallel |
| 安装类型 | — | Surface Mount |
| RoHS 状态 | — | [DATA_NEEDED: RoHS status] |