H5TC4G63CFR-PBA vs H5TC4G63AFR-PBI Comparison

Detailed side-by-side comparison of H5TC4G63CFR-PBA by SK hynix and H5TC4G63AFR-PBI by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5TC4G63CFR-PBA H5TC4G63CFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63CFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63CFR-PBA ✓ Active
SK hynix
H5TC4G63AFR-PBI H5TC4G63AFR-PBI - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63AFR-PBI - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63AFR-PBI Obsolete

Specification Comparison

Parameter H5TC4G63CFR-PBA H5TC4G63AFR-PBI
Brand SK hynix SK hynix
Category Memory ICs Memory ICs
Lifecycle Status Active Obsolete
Unit Price (USD) $6.23 —
Memory Type DDR3L SDRAM DDR3L SDRAM
Density 4Gb —
Organization 256M x 16 256M x 16
Supply Voltage (VDD/VDDQ) 1.35V +0.100/-0.067V —
Package 96-ball FBGA (PBGA96) 96-ball FBGA (TFBGA, BGA96, 9x16, 32)
Clock Input Fully differential (CK, CK) —
Data Strobe Differential (DQS, DQS) —
On-chip DLL Yes —
Data Mask (DM) Yes —
Auto Precharge Yes —
Auto Self-Refresh Yes —
Dynamic ODT Yes —
ZQ Calibration Yes —
Write Leveling Yes —
Asynchronous Reset Yes —
RoHS Compliant —
Halogen Free Yes —
Lead-Free Yes —
Total Memory Size — 4 Gb
Data Rate — DDR3-1600 (PC3L-12800)
Supply Voltage — 1.35 V
Number of Banks — 8
Burst Length — 8 (BL8)
CAS Latency — Programmable
On-Die Termination (ODT) — Yes
Refresh Period — 7.8 us at 85°C
Operating Temperature Range — -40°C to +95°C
Mounting Type — Surface Mount
Number of Terminals — 96
RoHS Status — Compliant

Datasheets & Resources

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