H5TC4G63CFR-PBA vs H5TC4G63AFR-PBI Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci H5TC4G63CFR-PBA disebabkan oleh SK hynix dan H5TC4G63AFR-PBI disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

SK hynix
H5TC4G63CFR-PBA H5TC4G63CFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63CFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63CFR-PBA ✓ Aktif
SK hynix
H5TC4G63AFR-PBI H5TC4G63AFR-PBI - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63AFR-PBI - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63AFR-PBI Obsolete

Pengandingan Spesifikasi

Parametr H5TC4G63CFR-PBA H5TC4G63AFR-PBI
Merek SK hynix SK hynix
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Obsolete
Harga Unit (USD) $6.23 —
Jenis Ingatan DDR3L SDRAM DDR3L SDRAM
Density 4Gb —
Organisasi 256M x 16 256M x 16
Supply Voltage (VDD/VDDQ) 1.35V +0.100/-0.067V —
Kemasan 96-ball FBGA (PBGA96) 96-ball FBGA (TFBGA, BGA96, 9x16, 32)
Clock Input Fully differential (CK, CK) —
Data Strobe Differential (DQS, DQS) —
On-chip DLL Yes —
Data Mask (DM) Yes —
Auto Precharge Yes —
Auto Self-Refresh Yes —
Dynamic ODT Yes —
ZQ Calibration Yes —
Write Leveling Yes —
Asynchronous Reset Yes —
RoHS Compliant —
Boson Bebas Yes —
Lead-Free Yes —
Total Memory Size — 4 Gb
Kadar Data — DDR3-1600 (PC3L-12800)
Tegangan Pemberi Arus — 1.35 V
Number of Banks — 8
Burst Length — 8 (BL8)
Latensi CAS — Programmable
On-Die Termination (ODT) — Yes
Refresh Period — 7.8 us at 85°C
Gambaran Suhu Operasi — -40°C to +95°C
Jenis Pemasangan — Surface Mount
Number of Terminals — 96
Status RoHS — Compliant

Laporan Datasheet & Sumber

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