H5TC4G63CFR-PBA vs H5TC4G63AFR-PBI 比較
詳細並排比較 H5TC4G63CFR-PBA 由 SK hynix 與 H5TC4G63AFR-PBI 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5TC4G63CFR-PBA | H5TC4G63AFR-PBI |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | Obsolete |
| 單價 (USD) | $6.23 | — |
| 記憶體類型 | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | — |
| 組織 | 256M x 16 | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V +0.100/-0.067V | — |
| 封裝 | 96-ball FBGA (PBGA96) | 96-ball FBGA (TFBGA, BGA96, 9x16, 32) |
| Clock Input | Fully differential (CK, CK) | — |
| Data Strobe | Differential (DQS, DQS) | — |
| On-chip DLL | Yes | — |
| Data Mask (DM) | Yes | — |
| Auto Precharge | Yes | — |
| Auto Self-Refresh | Yes | — |
| Dynamic ODT | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| Asynchronous Reset | Yes | — |
| RoHS | Compliant | — |
| 無鹵素 | Yes | — |
| Lead-Free | Yes | — |
| Total Memory Size | — | 4 Gb |
| 資料速率 | — | DDR3-1600 (PC3L-12800) |
| 供應電壓 | — | 1.35 V |
| Number of Banks | — | 8 |
| Burst Length | — | 8 (BL8) |
| CAS 延遲 | — | Programmable |
| On-Die Termination (ODT) | — | Yes |
| Refresh Period | — | 7.8 us at 85°C |
| 工作溫度範圍 | — | -40°C to +95°C |
| 安裝類型 | — | Surface Mount |
| Number of Terminals | — | 96 |
| RoHS 狀態 | — | Compliant |