IAUC100N10S5L054ATMA1 vs IAUCN10S5L110TATMA1 Perbandingan
Perbandingan bersamaan detil IAUC100N10S5L054ATMA1 dari Infineon dan IAUCN10S5L110TATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUCN10S5L110TATMA1 - 100V 61A OptiMOS 5 N-Ch MOSFET | Infineon
IAUCN10S5L110TATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IAUC100N10S5L054ATMA1 | IAUCN10S5L110TATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 (IAUC automotive family) | OptiMOS 5 |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-to-Source Voltage (V_DS) | 100 V | — |
| Gate-to-Source Voltage (V_GS) | [DATA_NEEDED: max V_GS value] | — |
| Continuous Drain Current (I_D, Tj) | 101 A | — |
| Power Dissipation (P_D, Tc) | 130 W | — |
| R_DS(on) max at V_GS=10V | 5.4 mΩ | — |
| Rentang Suhu Kerja | -55°C to +175°C | — |
| Paket | PG-TDSON-8-34 (surface mount) | PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled |
| Tipe Mounting | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 (automotive) | — |
| Technology | OptiMOS 5 trench | N-Channel MOSFET, Trench, Logic Level |
| Level MSL | [DATA_NEEDED: MSL rating] | MSL1 (260°C peak reflow) |
| Status RoHS | Compliant | Compliant |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tj | — | 61 A |
| On-Resistance RDS(on) max at VGS=10V | — | 11.3 mΩ |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: gate-source voltage rating] |
| Power Dissipation (PD) at Tc | — | 88 W |
| Suhu Hubung Kerja | — | -55 °C to +175 °C |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| Avalanche Rated | — | 100% Avalanche Tested |
| Automotive Qualification | — | AEC-Q101 Extended Qualification |