IAUC100N10S5L054ATMA1 vs IAUCN10S5L110TATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC100N10S5L054ATMA1 disebabkan oleh Infineon dan IAUCN10S5L110TATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUCN10S5L110TATMA1 - 100V 61A OptiMOS 5 N-Ch MOSFET | Infineon
IAUCN10S5L110TATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IAUC100N10S5L054ATMA1 | IAUCN10S5L110TATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 (IAUC automotive family) | OptiMOS 5 |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-to-Source Voltage (V_DS) | 100 V | — |
| Gate-to-Source Voltage (V_GS) | [DATA_NEEDED: max V_GS value] | — |
| Continuous Drain Current (I_D, Tj) | 101 A | — |
| Power Dissipation (P_D, Tc) | 130 W | — |
| R_DS(on) max at V_GS=10V | 5.4 mΩ | — |
| Gambaran Suhu Operasi | -55°C to +175°C | — |
| Kemasan | PG-TDSON-8-34 (surface mount) | PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 (automotive) | — |
| Technology | OptiMOS 5 trench | N-Channel MOSFET, Trench, Logic Level |
| Aras MSL | [DATA_NEEDED: MSL rating] | MSL1 (260°C peak reflow) |
| Status RoHS | Compliant | Compliant |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tj | — | 61 A |
| On-Resistance RDS(on) max at VGS=10V | — | 11.3 mΩ |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: gate-source voltage rating] |
| Power Dissipation (PD) at Tc | — | 88 W |
| Suhu Hubungan Operasi | — | -55 °C to +175 °C |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| Avalanche Rated | — | 100% Avalanche Tested |
| Automotive Qualification | — | AEC-Q101 Extended Qualification |