IAUCN04S7L006ATMA1 vs IAUCN04S7N009ATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN04S7L006ATMA1 dari Infineon dan IAUCN04S7N009ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUCN04S7L006ATMA1 IAUCN04S7L006ATMA1 - 40V 0.6mΩ 175A N-Ch MOSFET | Infineon

IAUCN04S7L006ATMA1 - 40V 0.6mΩ 175A N-Ch MOSFET | Infineon

IAUCN04S7L006ATMA1 ✓ Aktif
Infineon
IAUCN04S7N009ATMA1 IAUCN04S7N009ATMA1 - 40V 0.96mΩ 175A OptiMOS 7 | Infineon

IAUCN04S7N009ATMA1 - 40V 0.96mΩ 175A OptiMOS 7 | Infineon

IAUCN04S7N009ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUCN04S7L006ATMA1 IAUCN04S7N009ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D) 175 A 175 A
R_DS(on) Max 0.6 mΩ at V_GS = 10 V —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical value] —
Gate Charge (Q_g) [DATA_NEEDED: total gate charge] —
Rentang Suhu Kerja -55 °C to +175 °C —
Paket PG-TDSON-8-43 PG-TDSON-8-34 (Surface Mount)
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS-7 trench MOSFET (Metal Oxide)
Automotive Qualified Yes (AEC-Q101) —
Status RoHS Compliant Compliant
Jumlah Pin 8 —
Packaging Tape and Reel (ATMA1) —
Polarity Single N-Channel —
Manufacturer — Infineon Technologies
Series — OptiMOS 7
Drain-to-Source Voltage (V_DSS) — 40 V
R_DS(on) Max @ V_GS = 10 V — 0.96 mΩ
Gate Drive Voltage (V_GS) — 10 V
Suhu Kerja — -55C to +175C
Qualification — AEC-Q101 (Automotive)
Level MSL — 1
Configuration — Single N-Channel
Supplier Device Package — PG-TDSON-8-34

Spek dan Sumber

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