IAUCN04S7L006ATMA1 vs IAUCN04S7N009ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN04S7L006ATMA1 disebabkan oleh Infineon dan IAUCN04S7N009ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUCN04S7L006ATMA1 IAUCN04S7L006ATMA1 - 40V 0.6mΩ 175A N-Ch MOSFET | Infineon

IAUCN04S7L006ATMA1 - 40V 0.6mΩ 175A N-Ch MOSFET | Infineon

IAUCN04S7L006ATMA1 ✓ Aktif
Infineon
IAUCN04S7N009ATMA1 IAUCN04S7N009ATMA1 - 40V 0.96mΩ 175A OptiMOS 7 | Infineon

IAUCN04S7N009ATMA1 - 40V 0.96mΩ 175A OptiMOS 7 | Infineon

IAUCN04S7N009ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUCN04S7L006ATMA1 IAUCN04S7N009ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D) 175 A 175 A
R_DS(on) Max 0.6 mΩ at V_GS = 10 V —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical value] —
Gate Charge (Q_g) [DATA_NEEDED: total gate charge] —
Gambaran Suhu Operasi -55 °C to +175 °C —
Kemasan PG-TDSON-8-43 PG-TDSON-8-34 (Surface Mount)
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS-7 trench MOSFET (Metal Oxide)
Automotive Qualified Yes (AEC-Q101) —
Status RoHS Compliant Compliant
Kiraan Pin 8 —
Packaging Tape and Reel (ATMA1) —
Polarity Single N-Channel —
Manufacturer — Infineon Technologies
Series — OptiMOS 7
Drain-to-Source Voltage (V_DSS) — 40 V
R_DS(on) Max @ V_GS = 10 V — 0.96 mΩ
Gate Drive Voltage (V_GS) — 10 V
Suhu Operasi — -55C to +175C
Qualification — AEC-Q101 (Automotive)
Aras MSL — 1
Configuration — Single N-Channel
Supplier Device Package — PG-TDSON-8-34

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