IAUCN04S7L006ATMA1 vs IAUCN04S7N009ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IAUCN04S7L006ATMA1 sa pamamagitan ng Infineon at IAUCN04S7N009ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IAUCN04S7L006ATMA1 IAUCN04S7L006ATMA1 - 40V 0.6mΩ 175A N-Ch MOSFET | Infineon

IAUCN04S7L006ATMA1 - 40V 0.6mΩ 175A N-Ch MOSFET | Infineon

IAUCN04S7L006ATMA1 ✓ Nakahanda
Infineon
IAUCN04S7N009ATMA1 IAUCN04S7N009ATMA1 - 40V 0.96mΩ 175A OptiMOS 7 | Infineon

IAUCN04S7N009ATMA1 - 40V 0.96mΩ 175A OptiMOS 7 | Infineon

IAUCN04S7N009ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IAUCN04S7L006ATMA1 IAUCN04S7N009ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel N-Channel
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D) 175 A 175 A
R_DS(on) Max 0.6 mΩ at V_GS = 10 V —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical value] —
Gate Charge (Q_g) [DATA_NEEDED: total gate charge] —
Hanay ng Temperature na Operasyon -55 °C to +175 °C —
Packhaging PG-TDSON-8-43 PG-TDSON-8-34 (Surface Mount)
Uri ng Pagpapasok Surface Mount Surface Mount
Technology OptiMOS-7 trench MOSFET (Metal Oxide)
Automotive Qualified Yes (AEC-Q101) —
Tindminan RoHS Compliant Compliant
Bilang ng Pin 8 —
Packaging Tape and Reel (ATMA1) —
Polarity Single N-Channel —
Manufacturer — Infineon Technologies
Series — OptiMOS 7
Drain-to-Source Voltage (V_DSS) — 40 V
R_DS(on) Max @ V_GS = 10 V — 0.96 mΩ
Gate Drive Voltage (V_GS) — 10 V
Temperature na Operasyon — -55C to +175C
Qualification — AEC-Q101 (Automotive)
Level ng MSL — 1
Configuration — Single N-Channel
Supplier Device Package — PG-TDSON-8-34

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