IAUCN04S7N009ATMA1 vs IAUCN04S7L006ATMA1 Perbandingan
Perbandingan bersamaan detil IAUCN04S7N009ATMA1 dari Infineon dan IAUCN04S7L006ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IAUCN04S7N009ATMA1 | IAUCN04S7L006ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 7 | — |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | OptiMOS-7 trench |
| Drain-to-Source Voltage (V_DSS) | 40 V | — |
| Continuous Drain Current (I_D) | 175 A | 175 A |
| R_DS(on) Max @ V_GS = 10 V | 0.96 mΩ | — |
| Gate Drive Voltage (V_GS) | 10 V | — |
| Paket | PG-TDSON-8-34 (Surface Mount) | PG-TDSON-8-43 |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | -55C to +175C | — |
| Qualification | AEC-Q101 (Automotive) | — |
| Level MSL | 1 | — |
| Status RoHS | Compliant | Compliant |
| Configuration | Single N-Channel | — |
| Supplier Device Package | PG-TDSON-8-34 | — |
| Drain-Source Voltage (V_DS) | — | 40 V |
| R_DS(on) Max | — | 0.6 mΩ at V_GS = 10 V |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical value] |
| Gate Charge (Q_g) | — | [DATA_NEEDED: total gate charge] |
| Rentang Suhu Kerja | — | -55 °C to +175 °C |
| Automotive Qualified | — | Yes (AEC-Q101) |
| Jumlah Pin | — | 8 |
| Packaging | — | Tape and Reel (ATMA1) |
| Polarity | — | Single N-Channel |