IAUCN04S7N009ATMA1 vs IAUCN04S7L006ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN04S7N009ATMA1 disebabkan oleh Infineon dan IAUCN04S7L006ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IAUCN04S7N009ATMA1 | IAUCN04S7L006ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 7 | — |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | OptiMOS-7 trench |
| Drain-to-Source Voltage (V_DSS) | 40 V | — |
| Continuous Drain Current (I_D) | 175 A | 175 A |
| R_DS(on) Max @ V_GS = 10 V | 0.96 mΩ | — |
| Gate Drive Voltage (V_GS) | 10 V | — |
| Kemasan | PG-TDSON-8-34 (Surface Mount) | PG-TDSON-8-43 |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | -55C to +175C | — |
| Qualification | AEC-Q101 (Automotive) | — |
| Aras MSL | 1 | — |
| Status RoHS | Compliant | Compliant |
| Configuration | Single N-Channel | — |
| Supplier Device Package | PG-TDSON-8-34 | — |
| Drain-Source Voltage (V_DS) | — | 40 V |
| R_DS(on) Max | — | 0.6 mΩ at V_GS = 10 V |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical value] |
| Gate Charge (Q_g) | — | [DATA_NEEDED: total gate charge] |
| Gambaran Suhu Operasi | — | -55 °C to +175 °C |
| Automotive Qualified | — | Yes (AEC-Q101) |
| Kiraan Pin | — | 8 |
| Packaging | — | Tape and Reel (ATMA1) |
| Polarity | — | Single N-Channel |